Role of defects in tailoring structural, electrical and optical properties of ZnO

S Dutta, S Chattopadhyay, A Sarkar… - Progress in Materials …, 2009 - Elsevier
In this short topical review, a brief account of the evolution of defects due to controlled
changes in polycrystalline zinc oxide has been presented. X-ray diffraction, Positron …

Investigation of oxygen vacancy and interstitial oxygen defects in ZnO films by photoluminescence and X-ray photoelectron spectroscopy

F Hai-Bo, Y Shao-Yan, Z Pan-Feng… - Chinese Physics …, 2007 - iopscience.iop.org
ZnO films prepared at different temperatures and annealed at 900 C in oxygen are studied
by photoluminescence (PL) and x-ray photoelectron spectroscopy (XPS). It is observed that …

Defects and the optical absorption in nanocrystalline ZnO

S Dutta, S Chattopadhyay, M Sutradhar… - Journal of Physics …, 2007 - iopscience.iop.org
The correlation between the structural and optical properties of mechanically milled high
purity ZnO powder is reported in the present work. Reduction of average grain size and …

Correlation of spectral features of photoluminescence with residual native defects of ZnO thin films annealed at different temperatures

LM Kukreja, P Misra, J Fallert, DM Phase… - Journal of Applied …, 2012 - pubs.aip.org
We investigated the effects of post-growth annealing in the temperature range of 873 to
1273 K on the spectral features of photoluminescence (PL) vis-à-vis the crystalline and …

Relationship between nanostructure and optical properties of ZnO thin films

G Malandrino, M Blandino, ME Fragala… - The Journal of …, 2008 - ACS Publications
Nanostructured ZnO thin films have been grown on quartz substrates by metal organic
chemical vapor deposition. Zn (tta) 2• tmeda (H-tta= 2-thenoyltrifluoroacetone, tmeda= N, N …

Effect of pretreatment temperature on the photocatalytic activity of microwave irradiated porous nanocrystalline ZnO

TT Ali, K Narasimharao, IP Parkin, CJ Carmalt… - New Journal of …, 2015 - pubs.rsc.org
Porous nanocrystalline ZnO photocatalysts were successfully synthesized by microwave
irradiation and then thermally treated at different temperatures (150° C, 200° C, 250° C and …

Effect of Er concentration on surface and optical properties of K doped ZnO sol–gel thin films

R Vettumperumal, S Kalyanaraman… - Superlattices and …, 2015 - Elsevier
The K doped and (K, Er) codoped ZnO thin films were prepared on glass substrate by sol–
gel method. The microstructures and optical properties of the doped and codoped films are …

Electrical Characteristics of n-ZnO/p-Si Heterojunction Diodes Grown by Pulsed Laser Deposition at Different Oxygen Pressures

RS Ajimsha, MK Jayaraj, LM Kukreja - Journal of Electronic Materials, 2008 - Springer
Heterojunction diodes of n-type ZnO/p-type silicon (100) were fabricated by pulsed laser
deposition of ZnO films on p-Si substrates in oxygen ambient at different pressures. These …

Effect of annealing temperature on ZnO: Al/p-Si heterojunctions

N Baydogan, O Karacasu, H Cimenoglu - Thin Solid Films, 2012 - Elsevier
Al-doped, zinc oxide (ZnO: Al) films with a 1.2 at.% Al concentration were deposited on p-
type silicon wafers using a sol–gel dip coating technique to produce a ZnO: Al/p-Si …

Fabrication of preferential orientation ZnO thin films with exposed holes by high temperature annealing low-temperature-grown ZnO thin films on different substrates

W Yang, J Liu, M Liu, Y Liu, N Wang, G Shen… - Superlattices and …, 2019 - Elsevier
In this work, we report that (001) preferential orientation ZnO thin films with exposed holes
grown on Si (100), Si (111) and sapphire (001) substrates by magnetron sputtering are …