Electrical and interfacial properties of Sn/Methylene Blue (MB)/p-Si Schottky diode have
been determined by using current–voltage (I–V) and capacitance–voltage (C–V) …

The forward and reverse bias current–voltage (I–V), capacitance–voltage (C–V) and
conductance–voltage (G/ω–V) characteristics of the Au/PVA (Bi-doped)/n-Si Schottky barrier …

In this study, the electrical characteristics of the Cr/n-type Si (MS) Schottky barrier diode
have been investigated by the current–voltage (I–V) and capacitance–voltage (C–V) …

Abstract Au/PVC+ TCNQ/p-Si structure was fabricated and real and imaginary parts of the
dielectric constant (ɛ′, ɛ ″), loss tangent (tan δ), and the real and imaginary parts of the …

We fabricated the Au/n-type Ge Schottky barrier diodes (SBDs) by introducing a graphene
interlayer in-between Au and n-type Ge. Then we investigated the effects of the graphene …

The variations in the electrical properties of Cr Schottky contacts formed by electrodeposition
technique on n-type Si substrate have been investigated as a function of temperature using …

A Schottky barrier diode (SBD) based on p-NiO thin film and Zn metal has been fabricated
on a Pt/Si substrate using the RF sputtering technique. To get information regarding the …

In this study, electrical characteristics of the Sn/p-type Si (MS) Schottky diodes have been
investigated by current–voltage (I–V) and capacitance–voltage (C–V) measurements at …

We have fabricated Au/n-Si and Au/PVA: Zn/n-Si Schottky barrier diodes (SBDs) to
investigate the effect of organic interfacial layer on the main electrical characteristics. Zn …

The letter reports that frequency response of heterojunction structure based on a spin-
coated graphene-PVP thin film on silicon with gold Schottky contacts and the electronic …