Perspective of 2D integrated electronic circuits: Scientific pipe dream or disruptive technology?
Within the last decade, considerable efforts have been devoted to fabricating transistors
utilizing 2D semiconductors. Also, small circuits consisting of a few transistors have been …
utilizing 2D semiconductors. Also, small circuits consisting of a few transistors have been …
[HTML][HTML] Comphy v3. 0—A compact-physics framework for modeling charge trapping related reliability phenomena in MOS devices
Charge trapping plays an important role for the reliability of electronic devices and manifests
itself in various phenomena like bias temperature instability (BTI), random telegraph noise …
itself in various phenomena like bias temperature instability (BTI), random telegraph noise …
Cryogenic characterization of low-frequency noise in 40-nm CMOS
This paper presents an extensive characterization of the low-frequency noise (LFN) at room
temperature (RT) and cryogenic temperature (4.2 K) of 40-nm bulk-CMOS transistors. The …
temperature (RT) and cryogenic temperature (4.2 K) of 40-nm bulk-CMOS transistors. The …
Modelling ultra-fast threshold voltage instabilities in Hf-based ferroelectrics
Temperature dependence of charge capture and emission in HfO 2 and ferroelectric doped
HfO 2 are examined over a wide temperature range. Sizeable threshold voltage (V th) …
HfO 2 are examined over a wide temperature range. Sizeable threshold voltage (V th) …
Electrically active defects in Al2O3-InGaAs MOS stacks at cryogenic temperatures
P La Torraca, A Padovani… - 2023 IEEE …, 2023 - ieeexplore.ieee.org
The effects of defects in In 0.47 Ga 0.53 As/Al 2 O 3/Ni metal-oxide-semiconductor (MOS)
stacks at cryogenic temperatures are investigated. The MOS stacks exhibit a hysteresis in …
stacks at cryogenic temperatures are investigated. The MOS stacks exhibit a hysteresis in …
Re-consideration of Correlation between Interface and Bulk Trap Generations using Cryogenic Measurement
Y Mitani, T Suzuki, Y Miyaki - 2024 IEEE International …, 2024 - ieeexplore.ieee.org
The interface trap generation under applying stress voltage is caused by hydrogen diffusion
subsequent to hydrogen release at MOS interfaces. These released hydrogen atoms also …
subsequent to hydrogen release at MOS interfaces. These released hydrogen atoms also …
New Insights into the Random Telegraph Noise (RTN) in FinFETs at Cryogenic Temperature
In this paper, we characterize the Random Telegraph Noise (RTN) in FinFETs at cryogenic
temperature. Owning to the steep subthreshold swing at cryogenic temperature, RTN …
temperature. Owning to the steep subthreshold swing at cryogenic temperature, RTN …
Physical Modelling of Charge Trapping Effects in SiC MOSFETs
In the recent past, lots of efforts have been put into further developing SiC power MOSFETs.
In addition to optimization of device geometry, ie, vertical device structure, various post …
In addition to optimization of device geometry, ie, vertical device structure, various post …