Theoretical Analysis of Threshold Characteristics in Electrically-Driven GeSn Lasers
GeSn lasers have emerged as a promising solution for on-chip lasers in silicon photonics.
This study systematically investigated the threshold characteristics of electrically-driven Ge 1 …
This study systematically investigated the threshold characteristics of electrically-driven Ge 1 …
Pressure Effects on the Optoelectronic Property of Nanocrystalline Anatase with Different Sizes
K Liu, L Dai, W Liang, S Luo, G Luo… - The Journal of …, 2024 - ACS Publications
In this study, we investigated the photoelectric properties of nanosized anatase (∼ 55 and∼
4 nm) under high pressure, utilizing in situ Raman spectroscopy, photocurrent …
4 nm) under high pressure, utilizing in situ Raman spectroscopy, photocurrent …
Mid-infrared silicon photonic lasers based on GeSn slab waveguide on silicon
YP Huang, BR Wu, S Ghosh, YT Jheng, YL Ho… - Optics …, 2024 - opg.optica.org
GeSn alloy has emerged as an attractive active material for Si-based mid-infrared (MIR)
lasers due to its direct bandgap nature at higher Sn concentrations. Here, we report on an …
lasers due to its direct bandgap nature at higher Sn concentrations. Here, we report on an …
High‐Detectivity GeSn Mid‐Infrared Photodetectors for Sensitive Infrared Spectroscopy
Infrared (IR) spectroscopy is a powerful, nondestructive analytical technique that requires
cost‐effective and highly sensitive IR photodetectors (PDs). Herein, complementary metal …
cost‐effective and highly sensitive IR photodetectors (PDs). Herein, complementary metal …