Novel dilute bismide, epitaxy, physical properties and device application
Dilute bismide in which a small amount of bismuth is incorporated to host III-Vs is the least
studied III-V compound semiconductor and has received steadily increasing attention since …
studied III-V compound semiconductor and has received steadily increasing attention since …
Effects of rapid thermal annealing on GaAs1-xBix alloys
AR Mohmad, F Bastiman, CJ Hunter… - Applied Physics …, 2012 - pubs.aip.org
The effects of rapid thermal annealing on the optical and structural properties of GaAs 1-x Bi
x alloys for x ranging from 0.022 to 0.065 were investigated. At room temperature, the …
x alloys for x ranging from 0.022 to 0.065 were investigated. At room temperature, the …
Growth far from equilibrium: Examples from III-V semiconductors
TF Kuech, SE Babcock, L Mawst - Applied Physics Reviews, 2016 - pubs.aip.org
The development of new applications has driven the field of materials design and synthesis
to investigate materials that are not thermodynamically stable phases. Materials which are …
to investigate materials that are not thermodynamically stable phases. Materials which are …
Variation of lattice constant and cluster formation in GaAsBi
We investigate the structural properties of GaAsBi layers grown by molecular beam epitaxy
on GaAs at substrate temperatures between 220–315 C. Irrespective of the growth …
on GaAs at substrate temperatures between 220–315 C. Irrespective of the growth …
GaAs(1-x)Bix: A Promising Material for Optoelectronics Applications
KK Nagaraja, YA Mityagin, MP Telenkov… - Critical Reviews in …, 2017 - Taylor & Francis
Bismuth alloying with GaAs has promised greater advantages in the realization of more
convenient mid and near IR photonic devices owing to its novel and unique properties. The …
convenient mid and near IR photonic devices owing to its novel and unique properties. The …
Photoreflectance and photoluminescence study of annealing effects on GaAsBi layers grown by metalorganic vapor phase epitaxy
The optical properties of GaAsBi layers grown by atmospheric pressure metalorganic vapor
phase epitaxy on p-type GaAs substrates and annealed at different temperatures are …
phase epitaxy on p-type GaAs substrates and annealed at different temperatures are …
Structural investigation of GaAs1− xBix/GaAs multiquantum wells
Y Tominaga, Y Kinoshita, K Oe, M Yoshimoto - Applied Physics Letters, 2008 - pubs.aip.org
GaAs 1− x Bi x/GaAs multiquantum wells (MQWs) have been grown in the layer-by-layer
mode of molecular beam epitaxy. A well-defined multilayered structure of the MQWs has …
mode of molecular beam epitaxy. A well-defined multilayered structure of the MQWs has …
[HTML][HTML] Low bandgap GaAsNBi solar cells
The development of low bandgap GaAsNBi solar cells grown using MBE is reported. The
devices include a pin heterostructure with GaAsNBi as the i-layer. The substrate rotation is …
devices include a pin heterostructure with GaAsNBi as the i-layer. The substrate rotation is …
Electronic transport in n-type modulation-doped AlGaAs/GaAsBi quantum well structures: influence of Bi and thermal annealing on electron effective mass and …
We investigate electronic transport properties of as-grown and annealed n-type modulation-
doped Al 0.15 Ga 0.85 As/GaAs 1− x Bi x (x= 0 and 0.04) quantum well (QW) structures …
doped Al 0.15 Ga 0.85 As/GaAs 1− x Bi x (x= 0 and 0.04) quantum well (QW) structures …
Effect of thermal annealing on structural and optical properties of the GaAs0. 963Bi0. 037 alloy
We have investigated the effect of thermal annealing on GaAs 0.963 Bi 0.037 layers grown
by atmospheric pressure metalorganic vapour phase epitaxy. High resolution x-ray …
by atmospheric pressure metalorganic vapour phase epitaxy. High resolution x-ray …