Enhancement of photoluminescence of GaAsBi quantum wells by parabolic design of AlGaAs barriers
S Pūkienė, M Karaliūnas, A Jasinskas… - …, 2019 - iopscience.iop.org
Influence of barrier material and structure on carrier quantum confinement in GaAsBi
quantum wells (QWs) is studied comprehensively. Single-and multi-QW structures were …
quantum wells (QWs) is studied comprehensively. Single-and multi-QW structures were …
Mid-infrared photoluminescence revealing internal quantum efficiency enhancement of type-I and type-II InAs core/shell nanowires
X Chen, H Alradhi, ZM Jin, L Zhu, AM Sanchez, S Ma… - Optics letters, 2022 - opg.optica.org
Internal quantum efficiency (IQE) is an important figure of merit for photoelectric applications.
While the InAs core/shell (c/s) nanowire (NW) is a promising solution for efficient quantum …
While the InAs core/shell (c/s) nanowire (NW) is a promising solution for efficient quantum …
Modulated Photoluminescence Mapping of Long-Wavelength Infrared / Type-II Superlattice: In-Plane Optoelectronic Uniformity
X Chen, L Zhu, Y Zhang, F Zhang, S Wang, J Shao - Physical Review Applied, 2021 - APS
In-plane uniformity of narrow-gap semiconductor In As/Ga Sb type-II superlattice (T2SL)
wafer is a crucial yet hard-to-evaluate prerequisite for high-performance long-wavelength …
wafer is a crucial yet hard-to-evaluate prerequisite for high-performance long-wavelength …
Increasing Optical Efficiency in the Telecommunication Bands of Strain-Engineered Alloys
The search for semiconducting materials with improved optical properties relies on the
possibility to manipulate the semiconductors band structure by using quantum confinement …
possibility to manipulate the semiconductors band structure by using quantum confinement …
[HTML][HTML] Polarization dependent photoluminescence and optical anisotropy in CuPtB-ordered dilute GaAs1–xBix alloys
T Paulauskas, B Čechavičius, V Karpus… - Journal of Applied …, 2020 - pubs.aip.org
The GaAs 1–x Bi x semiconductor alloy allows one to achieve large bandgap reduction and
enhanced spin–orbit splitting energy at dilute Bi quantities. The bismide is currently being …
enhanced spin–orbit splitting energy at dilute Bi quantities. The bismide is currently being …
Effect of MBE growth conditions on GaAsBi photoluminescence lineshape and localised state filling
A series of gallium arsenide bismide device layers covering a range of growth conditions are
thoroughly probed by low-temperature, power-dependent photoluminescence …
thoroughly probed by low-temperature, power-dependent photoluminescence …
Photoluminescence Evolution with Deposition Thickness of Ge Nanostructures Embedded in GaSb
Herein, low‐temperature and temperature‐dependent photoluminescence (PL)
measurements are carried out on highly tensile‐strained Ge nanostructures embedded in …
measurements are carried out on highly tensile‐strained Ge nanostructures embedded in …
[PDF][PDF] InPBi 禁带下红外光致发光效率的Bi 组分依赖研究
杨自力， 王嫚， 余灯广， 朱亮清， 邵军， 陈熙仁 - 红外与毫米波学报, 2023 - researching.cn
稀Bi 半导体InPBi 的光致发光(Photoluminescence, PL) 主要来自缺陷能级跃迁过程,
具有红外长波长, 大线宽和高辐射强度等特点, 因而引发广泛兴趣. 针对InPBi …
具有红外长波长, 大线宽和高辐射强度等特点, 因而引发广泛兴趣. 针对InPBi …
[PDF][PDF] 阱内δ 掺杂GaSbBi 单量子阱红外发光效率的光致发光光谱研究
马楠， 窦程， 王嫚， 朱亮清， 陈熙仁， 刘锋， 邵军 - 红外与毫米波 …, 2022 - researching.cn
采用变激发功率红外光致发光(Photoluminescence, PL) 光谱方法研究四个不同阱内δ
掺杂面密度的GaSb0. 93Bi0. 07/GaSb 单量子阱(Single Quantum Well, SQW) …
掺杂面密度的GaSb0. 93Bi0. 07/GaSb 单量子阱(Single Quantum Well, SQW) …
[PDF][PDF] 傅里叶变换红外拉曼光谱检测半导体薄膜下衬底特性
王炜， 陈熙仁， 余灯广， 邵军 - 红外与毫米波学报, 2020 - researching.cn
高质量半导体薄膜是制备高性能光电器件的基础, 其光电子性质很大程度受衬底所制约,
实验检测薄膜下衬底性质, 有助于薄膜生长优化. 然而, 表面薄膜覆盖后的衬底特性检测通常受到 …
实验检测薄膜下衬底性质, 有助于薄膜生长优化. 然而, 表面薄膜覆盖后的衬底特性检测通常受到 …