In this article, we review the recent progress of ferroelectric field-effect transistors (FeFETs)
based on ferroelectric hafnium oxide (HfO 2), ten years after the first report on such a device …

Ferroelectric field-effect transistors (FeFETs) have become an attractive technology for
memory and emerging applications on a silicon electronic platform after the discovery of the …

The comparatively high coercive field in Hf0. 5Zr0. 5O2 (HZO) and other HfO2-based
ferroelectric thin films leads to two critical challenges for their application in embedded …

Negative capacitance in ferroelectric materials has been suggested as a solution to reduce
the power dissipation of electronics beyond fundamental limits. The discovery of …

Reservoir computing offers efficient processing of time-series data with exceptionally low
training cost for real-time computing in edge devices where energy and hardware resources …

A memory window (MW) of ferroelectric field-effect transistors (FeFETs), defined as a
separation of the HIGH-state and the LOW-state threshold voltages, is an important measure …

Ferroelectric hafnium oxide is of major interest for a multitude of applications in
microelectronics, ranging from neuromorphic devices to actuators and sensors. While the …

The discovery of ferroelectricity in HfO2-based thin films in 2011 1, 2 introduced the
possibility of integrating and scaling ferroelectric memory devices with three-dimensional …

Data intensive applications such as AI (Artificial Intelligence) and IoT (Internet of Things)
demand high performance and highly reliable non-volatile memories (NVM). FeFET offers …

A nonvolatile optical phase shifter is a critical component for enabling the fabrication of
programmable photonic integrated circuits on a Si photonics platform, facilitating …