Mott memory and neuromorphic devices

Y Zhou, S Ramanathan - Proceedings of the IEEE, 2015 - ieeexplore.ieee.org
Orbital occupancy control in correlated oxides allows the realization of new electronic
phases and collective state switching under external stimuli. The resultant structural and …

Oxide electronics utilizing ultrafast metal-insulator transitions

Z Yang, C Ko, S Ramanathan - Annual Review of Materials …, 2011 - annualreviews.org
Although phase transitions have long been a centerpiece of condensed matter materials
science studies, a number of recent efforts focus on potentially exploiting the resulting …

High open‐circuit voltages in tin‐rich low‐bandgap perovskite‐based planar heterojunction photovoltaics

B Zhao, M Abdi‐Jalebi, M Tabachnyk… - Advanced …, 2017 - Wiley Online Library
DOI: 10.1002/adma. 201604744 cation.[29–31] Of relevance to this work is the binary metal
perovskite CH3NH3 (PbxSn1–x) I3 [0≤ x≤ 1].[30, 31] Interestingly, the bandgap bows and …

Electrodynamics of correlated electron materials

DN Basov, RD Averitt, D Van Der Marel, M Dressel… - Reviews of Modern …, 2011 - APS
Studies of the electromagnetic response of various classes of correlated electron materials
including transition-metal oxides, organic and molecular conductors, intermetallic …

Terahertz metamaterials with VO2 cut-wires for thermal tunability

QY Wen, HW Zhang, QH Yang, YS Xie, K Chen… - Applied physics …, 2010 - pubs.aip.org
An active terahertz (THz) metamaterial with vanadium dioxide (VO 2) cut-wire resonators
fabricated on glass substrate was proposed, and THz time-domain spectroscopy was used …

Metamaterials based on the phase transition of VO2

H Liu, J Lu, XR Wang - Nanotechnology, 2017 - iopscience.iop.org
In this article, we present a comprehensive review on recent research progress in design
and fabrication of active tunable metamaterials and devices based on phase transition of VO …

Inhomogeneity of the ultrafast insulator-to-metal transition dynamics of VO2

BT O'Callahan, AC Jones, J Hyung Park… - Nature …, 2015 - nature.com
The insulator-metal transition (IMT) of vanadium dioxide (VO2) has remained a long-
standing challenge in correlated electron physics since its discovery five decades ago. Most …

Terahertz time-domain ellipsometry with high precision for the evaluation of GaN crystals with carrier densities up to 1020 cm−3

VC Agulto, T Iwamoto, H Kitahara, K Toya… - Scientific Reports, 2021 - nature.com
Gallium nitride (GaN) is one of the most technologically important semiconductors and a
fundamental component in many optoelectronic and power devices. Low-resistivity GaN …

Structural, electrical, and terahertz transmission properties of VO2 thin films grown on c-, r-, and m-plane sapphire substrates

Y Zhao, J Hwan Lee, Y Zhu, M Nazari, C Chen… - Journal of Applied …, 2012 - pubs.aip.org
The structure, metal-insulator transition (MIT), and related Terahertz (THz) transmission
characteristics of VO 2 thin films obtained by sputtering deposition on c-, r-, and m-plane …

Ultrafast insulator-metal phase transition in VO studied by multiterahertz spectroscopy

A Pashkin, C Kübler, H Ehrke, R Lopez, A Halabica… - Physical Review B …, 2011 - APS
The ultrafast photoinduced insulator-metal transition in VO 2 is studied at different
temperatures and excitation fluences using multi-THz probe pulses. The spectrally resolved …