200 V-depletion mode GaN HEMT on Si

High sensitivity label-free detection of HER2 using an Al–GaN/GaN high electron mobility transistor-based biosensor

S Mishra, P Kachhawa, AK Jain, RR Thakur… - Lab on a Chip, 2022 - pubs.rsc.org
This work reports rapid, label-free and specific detection of the HER2 antigen using a
gallium nitride (GaN) high electron mobility transistor (HEMT). Thiol-based chemistry has …
被引用次数：6 相关文章 所有 3 个版本

AlGaN/GaN HEMT based biosensor for detection of the HER2 antigen spiked in human serum

S Mishra, P Kachhawa, P Mondal… - … on Electron Devices, 2022 - ieeexplore.ieee.org
This work reports the development of a gallium nitride-based high electronic mobility
transistor (GaN HEMT)-based biosensor to detect human epidermal growth factor receptor-2 …
被引用次数：9 相关文章 所有 2 个版本