Engineered quantum dot single-photon sources
Fast, high efficiency and low error single-photon sources are required for the implementation
of a number of quantum information processing applications. The fastest triggered single …
of a number of quantum information processing applications. The fastest triggered single …
Modeling electronic and optical properties of III–V quantum dots—selected recent developments
Electronic properties of selected quantum dot (QD) systems are surveyed based on the multi-
band k· p method, which we benchmark by direct comparison to the empirical tight-binding …
band k· p method, which we benchmark by direct comparison to the empirical tight-binding …
Telecom wavelength single photon sources
Single photon sources are key components for quantum technologies such as quantum
communication, computing and metrology. A key challenge towards the realization of global …
communication, computing and metrology. A key challenge towards the realization of global …
Electronic states of (InGa)(AsSb)/GaAs/gap quantum dots
Detailed theoretical studies of the electronic structure of (InGa)(AsSb)/GaAs/GaP quantum
dots are presented. This system is unique since it exhibits concurrently direct and indirect …
dots are presented. This system is unique since it exhibits concurrently direct and indirect …
Biexciton recombination rates in self-assembled quantum dots
The radiative recombination rates of interacting electron-hole pairs in a quantum dot are
strongly affected by quantum correlations among electrons and holes in the dot. Recent …
strongly affected by quantum correlations among electrons and holes in the dot. Recent …
Second harmonic generation in GaP photonic crystal waveguides
We demonstrate enhanced second harmonic generation in a gallium phosphide photonic
crystal waveguide with a measured external conversion efficiency of 5× 10− 7/W. Our results …
crystal waveguide with a measured external conversion efficiency of 5× 10− 7/W. Our results …
Electronic, optical, and structural properties of (In, Ga) As/GaP quantum dots
We study in detail self-assembled (In, Ga) As quantum dots grown on GaP substrate from the
structural, theoretical, and optical points of view. Single quantum dot morphology is first …
structural, theoretical, and optical points of view. Single quantum dot morphology is first …
Red light-emitting diodes based on InP∕ GaP quantum dots
The growth, fabrication, and device characterization of InP quantum-dot light-emitting diodes
based on GaP are described and discussed. The diode structures are grown on gallium …
based on GaP are described and discussed. The diode structures are grown on gallium …
Selective Growth of GaP Crystals on CMOS-Compatible Si Nanotip Wafers by Gas Source Molecular Beam Epitaxy
N Kafi, S Kang, C Golz… - Crystal Growth & …, 2024 - ACS Publications
Gallium phosphide (GaP) is a III–V semiconductor with remarkable optoelectronic
properties, and it has almost the same lattice constant as silicon (Si). However, to date, the …
properties, and it has almost the same lattice constant as silicon (Si). However, to date, the …
Thermodynamic modelling of InAs/InP (0 0 1) growth towards quantum dots formation by metalorganic vapor phase epitaxy
Abstract Quantum Dots (QDs) are considered as an efficient building block of many
optoelectronic applications, such as semiconductor laser, photodetector, whereby their …
optoelectronic applications, such as semiconductor laser, photodetector, whereby their …