Engineered quantum dot single-photon sources

S Buckley, K Rivoire, J Vučković - Reports on Progress in Physics, 2012 - iopscience.iop.org
Fast, high efficiency and low error single-photon sources are required for the implementation
of a number of quantum information processing applications. The fastest triggered single …

Modeling electronic and optical properties of III–V quantum dots—selected recent developments

A Mittelstädt, A Schliwa, P Klenovský - Light: Science & Applications, 2022 - nature.com
Electronic properties of selected quantum dot (QD) systems are surveyed based on the multi-
band k· p method, which we benchmark by direct comparison to the empirical tight-binding …

Telecom wavelength single photon sources

X Cao, M Zopf, F Ding - Journal of Semiconductors, 2019 - iopscience.iop.org
Single photon sources are key components for quantum technologies such as quantum
communication, computing and metrology. A key challenge towards the realization of global …

Electronic states of (InGa)(AsSb)/GaAs/gap quantum dots

P Klenovský, A Schliwa, D Bimberg - Physical Review B, 2019 - APS
Detailed theoretical studies of the electronic structure of (InGa)(AsSb)/GaAs/GaP quantum
dots are presented. This system is unique since it exhibits concurrently direct and indirect …

Biexciton recombination rates in self-assembled quantum dots

M Wimmer, SV Nair, J Shumway - Physical Review B—Condensed Matter and …, 2006 - APS
The radiative recombination rates of interacting electron-hole pairs in a quantum dot are
strongly affected by quantum correlations among electrons and holes in the dot. Recent …

Second harmonic generation in GaP photonic crystal waveguides

K Rivoire, S Buckley, F Hatami, J Vučković - Applied Physics Letters, 2011 - pubs.aip.org
We demonstrate enhanced second harmonic generation in a gallium phosphide photonic
crystal waveguide with a measured external conversion efficiency of 5× 10− 7/W. Our results …

Electronic, optical, and structural properties of (In, Ga) As/GaP quantum dots

C Robert, C Cornet, P Turban, T Nguyen Thanh… - Physical Review B …, 2012 - APS
We study in detail self-assembled (In, Ga) As quantum dots grown on GaP substrate from the
structural, theoretical, and optical points of view. Single quantum dot morphology is first …

Red light-emitting diodes based on InP∕ GaP quantum dots

F Hatami, V Lordi, JS Harris, H Kostial… - Journal of applied …, 2005 - pubs.aip.org
The growth, fabrication, and device characterization of InP quantum-dot light-emitting diodes
based on GaP are described and discussed. The diode structures are grown on gallium …

Selective Growth of GaP Crystals on CMOS-Compatible Si Nanotip Wafers by Gas Source Molecular Beam Epitaxy

N Kafi, S Kang, C Golz… - Crystal Growth & …, 2024 - ACS Publications
Gallium phosphide (GaP) is a III–V semiconductor with remarkable optoelectronic
properties, and it has almost the same lattice constant as silicon (Si). However, to date, the …

Thermodynamic modelling of InAs/InP (0 0 1) growth towards quantum dots formation by metalorganic vapor phase epitaxy

S Hasan, C Merckling, M Pantouvaki… - Journal of Crystal …, 2019 - Elsevier
Abstract Quantum Dots (QDs) are considered as an efficient building block of many
optoelectronic applications, such as semiconductor laser, photodetector, whereby their …