Carbon is a common impurity in the group-III nitrides, often unintentionally incorporated
during growth. Nevertheless, the properties of carbon impurities in the nitrides are still not …

Various forms of carbon based complexes in GaN are studied with first-principles
calculations employing Heyd-Scuseria-Ernzerhof hybrid functionals within the framework of …

Carbon related defects are readily incorporated in GaN due to its abundance during growth
both with MBE and MOCVD techniques. Employing first-principles calculations, we compute …

This work presents an in-depth investigation of the properties of complexes composed of
hydrogen, silicon, or oxygen with carbon, which are the major unintentional impurities in …

GaN is of great importance for optoelectronic and power electronic devices, and carbon is
one of its most common impurities, used also actively for preparing semi-insulating buffer …

A room-temperature method to determine the trap energy levels in the carbon-doped (Al)
GaN buffers is developed via a transient current measurement on the AlGaN/GaN high …

We apply a hybrid density functional theory approach, based on a tuned and screened
range-separated hybrid (SRSH) exchange-correlation functional, to describe the …

A bulk photovoltaic effect was observed in insulating carbon-doped gallium nitride crystals
by investigating the light-induced change of the contact potential difference with a Kelvin …

Power diodes or transistors must be able to work in high voltage/high current use, for
instance in AC/DC converters. However, in such aggressive conditions trapping effects can …

In this article, the degradation of 234 nm AlGaN-based far-UVC light-emitting diodes (LEDs)
under constant current stress is studied in-depth by the combination of optical and electrical …