The anderson-mott transition
D Belitz, TR Kirkpatrick - Reviews of modern physics, 1994 - APS
The interacting disordered electron problem is reviewed with emphasis on the quantum
phase transitions that occur in a model system and on the field-theoretic methods used to …
phase transitions that occur in a model system and on the field-theoretic methods used to …
Pulsed-laser hyperdoping and surface texturing for photovoltaics
MJ Sher, MT Winkler, E Mazur - MRS bulletin, 2011 - cambridge.org
We describe two ways in which pulsed lasers can be used to increase efficiency in
photovoltaic devices. First, pulsed-laser hyperdoping can introduce dopants into a …
photovoltaic devices. First, pulsed-laser hyperdoping can introduce dopants into a …
A simulation model for the density of states and for incomplete ionization in crystalline silicon. I. Establishing the model in Si: P
A simulation model for the density of states and for incomplete ionization in crystalline silicon. I.
Establishing the model in Si:P | Journal of Applied Physics | AIP Publishing Skip to Main Content …
Establishing the model in Si:P | Journal of Applied Physics | AIP Publishing Skip to Main Content …
Metal-insulator transition in a doped semiconductor
TF Rosenbaum, RF Milligan, MA Paalanen… - Physical Review B, 1983 - APS
Millikelvin measurements of the conductivity as a function of donor density and uniaxial
stress in bulk samples of phosphorus-doped silicon establish that the transition from metal to …
stress in bulk samples of phosphorus-doped silicon establish that the transition from metal to …
Anderson–Mott transition in arrays of a few dopant atoms in a silicon transistor
Dopant atoms are used to control the properties of semiconductors in most electronic
devices. Recent advances such as single-ion implantation,,,, have allowed the precise …
devices. Recent advances such as single-ion implantation,,,, have allowed the precise …
Optical conductivity of bismuth-based topological insulators
The optical conductivity σ 1 (ω) and the spectral weight SW of four topological insulators with
increasing chemical compensation (Bi 2 Se 3, Bi 2 Se 2 Te, Bi 2− x Ca x Se 3, and Bi 2 Te 2 …
increasing chemical compensation (Bi 2 Se 3, Bi 2 Se 2 Te, Bi 2− x Ca x Se 3, and Bi 2 Te 2 …
Band mass anisotropy and the intrinsic metric of fractional quantum Hall systems
B Yang, Z Papić, EH Rezayi, RN Bhatt… - Physical Review B …, 2012 - APS
It was recently pointed out that topological liquid phases arising in the fractional quantum
Hall effect (FQHE) are not required to be rotationally invariant, as most variational wave …
Hall effect (FQHE) are not required to be rotationally invariant, as most variational wave …
Effective-field theory of local-moment formation in disordered metals
M Milovanović, S Sachdev, RN Bhatt - Physical review letters, 1989 - APS
We present a simple new effective-field theory for the metallic state of a disordered
interacting Fermi liquid, taking into account its instability towards the formation of local …
interacting Fermi liquid, taking into account its instability towards the formation of local …
Tunability of the dielectric function of heavily doped germanium thin films for mid-infrared plasmonics
Heavily doped semiconductor thin films are very promising for application in mid-infrared
plasmonic devices because the real part of their dielectric function is negative and broadly …
plasmonic devices because the real part of their dielectric function is negative and broadly …
Low-temperature magnetic susceptibility of Si: P in the nonmetallic region
K Andres, RN Bhatt, P Goalwin, TM Rice, RE Walstedt - Physical Review B, 1981 - APS
Measurements of the phosphorus donor susceptibility χ D (T) in Si: P have been made using
a superconducting quantum interference device at phosphorus concentrations from 1× 10 …
a superconducting quantum interference device at phosphorus concentrations from 1× 10 …