The interacting disordered electron problem is reviewed with emphasis on the quantum
phase transitions that occur in a model system and on the field-theoretic methods used to …

We describe two ways in which pulsed lasers can be used to increase efficiency in
photovoltaic devices. First, pulsed-laser hyperdoping can introduce dopants into a …

A simulation model for the density of states and for incomplete ionization in crystalline silicon. I.
Establishing the model in Si:P | Journal of Applied Physics | AIP Publishing Skip to Main Content …

Millikelvin measurements of the conductivity as a function of donor density and uniaxial
stress in bulk samples of phosphorus-doped silicon establish that the transition from metal to …

Dopant atoms are used to control the properties of semiconductors in most electronic
devices. Recent advances such as single-ion implantation,,,, have allowed the precise …

The optical conductivity σ 1 (ω) and the spectral weight SW of four topological insulators with
increasing chemical compensation (Bi 2 Se 3, Bi 2 Se 2 Te, Bi 2− x Ca x Se 3, and Bi 2 Te 2 …

It was recently pointed out that topological liquid phases arising in the fractional quantum
Hall effect (FQHE) are not required to be rotationally invariant, as most variational wave …

We present a simple new effective-field theory for the metallic state of a disordered
interacting Fermi liquid, taking into account its instability towards the formation of local …

Heavily doped semiconductor thin films are very promising for application in mid-infrared
plasmonic devices because the real part of their dielectric function is negative and broadly …

Measurements of the phosphorus donor susceptibility χ D (T) in Si: P have been made using
a superconducting quantum interference device at phosphorus concentrations from 1× 10 …