Recent research focusing on wide-bandgap and two-dimensional materials with a Schottky
junction has provided a new concept for ultraviolet photodetectors. However, the working …

In this work, a metal-oxide-semiconductor capacitor with zirconium oxide (ZrO 2) gate
dielectric was fabricated by an atomic layer deposition (ALD) technique and the leakage …

The impact of 8-to 45-at.% Ti on physical and electrical characteristics of atomic-layer-
deposited and annealed hafnium dioxide was studied using vacuum-ultraviolet …

We have observed charge trapping during constant voltage stress in Hf-based high-κ
dielectrics at deep traps as well as at the shallow traps. and leakage current dependence on …

In this work dielectric and electrical properties of Al-doped HfO2 layers deposited by plasma-
enhanced atomic layer deposition in dependence on the thickness and the added Al amount …

In-situ IV and CV characterization studies were carried out to determine the device quality of
atomic layer deposited HfO 2 (2.7 nm)/SiO 2 (0.6 nm)/Si-based metal oxide semiconductor …

Herein, a comparative study of the effects of atomic-layer-deposited (ALD) HfO2 and Al2O3
interfacial passivation layers (IPL) on the sputtering-derived HfDyOx (HDO)/Si gate stack has …

The radiation response, long-term performance, and reliability of HfO 2-based gate dielectric
materials play a critical role in metal oxide semiconductor (MOS) technology for space …

Ti x Si 1-x O 2 thin films appear as promising materials to replace SiO 2 for DRAM devices.
For the effective down scaling, these mixed oxides should combine the best properties from …

Al-Ta mixed oxides were grown by anodizing sputter-deposited Al-Ta alloys of different
composition. Photocurrent spectra revealed a band gap, E g, slightly independent on Ta …