In this review, we report on fabrication paths, challenges, and emerging solutions to
integrate group-IV epitaxial quantum dots (QDs) as active light emitters into the existing …

Strain engineering is a powerful approach in micro-and optoelectronics to enhance carrier
mobility, tune the bandgap of heterostructures, or break lattice symmetry for nonlinear optics …

Germanium is an ideal candidate to achieve a monolithically integrated laser source on
silicon. Unfortunately bulk germanium is an indirect band gap semiconductor. Here, we …

Ge on Si micro-disk, ring and racetrack cavities are fabricated and strained using silicon
nitride stressor layers. Photoluminescence measurements demonstrate emission at …

GeSn alloys with Sn contents of 8.4% and 10.7% are grown pseudomorphically on Ge
buffers on Si (001) substrates. The alloys as-grown are compressively strained, and …

High n-type doping in germanium is essential for many electronic and optoelectronic
applications especially for high performance Ohmic contacts, lasing and mid-infrared …

Spin-optoelectronics is an emerging technology in which novel and advanced functionalities
are enabled by the synergetic integration of magnetic, optical and electronic properties onto …

Enhanced optical absorption in the L band (1.565–1.625 μm) of optical communication is
reported for a Ge epitaxial layer grown on a Si-on-quartz (SOQ) wafer toward an extended …

Improving detection efficiency of Ge photodetector near the absorptance edge is crucial for
fiber-optic telecommunication. Here, we report the unique photodetection properties of …

Mid-infrared intersubband absorption from p-Ge quantum wells with Si 0.5 Ge 0.5 barriers
grown on a Si substrate is demonstrated from 6 to 9 μm wavelength at room temperature …