Anomalous strain relaxation in core–shell nanowire heterostructures via simultaneous coherent and incoherent growth
Nanoscale substrates such as nanowires allow heterostructure design to venture well
beyond the narrow lattice mismatch range restricting planar heterostructures, owing to misfit …
beyond the narrow lattice mismatch range restricting planar heterostructures, owing to misfit …
3D Bragg coherent diffraction imaging of extended nanowires: defect formation in highly strained InGaAs quantum wells
InGaAs quantum wells embedded in GaAs nanowires can serve as compact near-infrared
emitters for direct integration onto Si complementary metal oxide semiconductor technology …
emitters for direct integration onto Si complementary metal oxide semiconductor technology …
Growth and strain relaxation mechanisms of InAs/InP/GaAsSb core-dual-shell nanowires
The combination of core/shell geometry and band gap engineering in nanowire
heterostructures can be employed to realize systems with novel transport and optical …
heterostructures can be employed to realize systems with novel transport and optical …
Coaxial GaAs/(In, Ga) As dot-in-a-well nanowire heterostructures for electrically driven infrared light generation on Si in the telecommunication O band
Core–shell GaAs-based nanowires monolithically integrated on Si constitute a promising
class of nanostructures that could enable light emitters for fast inter-and intrachip optical …
class of nanostructures that could enable light emitters for fast inter-and intrachip optical …
Determination of indium content of GaAs/(In, Ga) As/(GaAs) core-shell (-shell) nanowires by x-ray diffraction and nano x-ray fluorescence
We present two complementary approaches to investigate the In content in GaAs/(In, Ga)
As/(GaAs) core-shell-(shell) nanowire (NW) heterostructures using synchrotron radiation …
As/(GaAs) core-shell-(shell) nanowire (NW) heterostructures using synchrotron radiation …
Complete structural and strain analysis of single GaAs/(In, Ga) As/GaAs core–shell–shell nanowires by means of in-plane and out-of-plane X-ray nanodiffraction
Typically, core–shell–shell semiconductor nanowires (NWs) made from III–V materials with
low lattice mismatch grow pseudomorphically along the growth axis, ie the axial lattice …
low lattice mismatch grow pseudomorphically along the growth axis, ie the axial lattice …
[PDF][PDF] Threefold rotational symmetry in hexagonally shaped core–shell (In, Ga) As/GaAs nanowires revealed by coherent X-ray diffraction imaging
A Davtyan, T Krause, D Kriegner… - Journal of applied …, 2017 - journals.iucr.org
Coherent X-ray diffraction imaging at symmetric hhh Bragg reflections was used to resolve
the structure of GaAs/In0. 15Ga0. 85As/GaAs core–shell–shell nanowires grown on a silicon …
the structure of GaAs/In0. 15Ga0. 85As/GaAs core–shell–shell nanowires grown on a silicon …
Exciton recombination at crystal-phase quantum rings in GaAs/InxGa1− xAs core/multishell nanowires
We study the optical properties of coaxial GaAs/In x Ga 1− x As core/multishell nanowires
with x between 0.2 and 0.4 at 10 K. The evolution of the photoluminescence energy of the In …
with x between 0.2 and 0.4 at 10 K. The evolution of the photoluminescence energy of the In …
Impact of outer shell structure and localization effects on charge carrier dynamics in GaAs/(In, Ga) As nanowire core–shell quantum wells
Herein, the charge carrier dynamics in GaAs/(In, Ga) As/(Al, Ga) As core–shell nanowires
with different outer shell structures are studied. Localization of charge carriers in the minima …
with different outer shell structures are studied. Localization of charge carriers in the minima …
Coherent X-ray diffraction imaging meets ptychography to study core-shell-shell nanowires
We report on the results of coherent X-ray diffraction imaging (CXDI) and ptychography
measurements of two individual core-shell-shell GaAs/(In, Ga) As/GaAs nanowires (NWs) …
measurements of two individual core-shell-shell GaAs/(In, Ga) As/GaAs nanowires (NWs) …