Gallium oxide (Ga 2 O 3) is emerging as a viable candidate for certain classes of power
electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond …

Abstract β-Ga 2 O 3 is an emerging, ultra-wide bandgap (energy gap of 4.85 eV) transparent
semiconducting oxide, which attracted recently much scientific and technological attention …

Ga 2 O 3 based self-powered photodetectors, which can work in photovoltaic mode, show
great potential applications in the next-generation photodetectors. Due to the difficulty of p …

Abstract Gallium oxide (Ga 2 O 3), an emerging ultra-wide-bandgap semiconductor, has the
desirable properties of a large bandgap of 4.6–4.9 eV, an estimated critical breakdown field …

Gallium oxide (β-Ga 2 O 3) is an emerging semiconductor with relevant properties for power
electronics, solar-blind photodetectors, and some sensor applications due to its ultra-wide …

Ga2O3 is attractive for power devices and solar-blind ultraviolet photodetectors due to its
ultra-wide bandgap, large breakdown field, and favorable stability. However, it is difficult to …

The strong bonding in wide bandgap semiconductors gives them an intrinsic radiation
hardness. Their suitability for space missions or military applications, where issues of …

A guard ring (GR) was employed to improve the breakdown voltage (V br) of vertical Ga 2 O
3 Schottky barrier diodes (SBDs) with or without a field-plate (FP) by eliminating electric field …

With projected performance advantages over silicon and incumbent wide-bandgap
compound semiconductors, gallium oxide (Ga 2 O 3) has garnered worldwide attention as …

With a wide band gap, high critical breakdown voltage and commercially available
substrates, Ga 2 O 3 is a promising material for next-generation power electronics. Like most …