Carbon nanotube transistor technology for More-Moore scaling

Q Cao - Nano Research, 2021 - Springer
Scaling of silicon field-effect transistors has fueled the exponential development of
microelectronics in the past 60 years, but is now close to its physical limits with the critical …

Chirality‐enriched carbon nanotubes for next‐generation computing

WA Gaviria Rojas, MC Hersam - Advanced Materials, 2020 - Wiley Online Library
For the past half century, silicon has served as the primary material platform for integrated
circuit technology. However, the recent proliferation of nontraditional electronics, such as …

Quasi-ballistic carbon nanotube array transistors with current density exceeding Si and GaAs

GJ Brady, AJ Way, NS Safron, HT Evensen… - Science …, 2016 - science.org
Carbon nanotubes (CNTs) are tantalizing candidates for semiconductor electronics because
of their exceptional charge transport properties and one-dimensional electrostatics. Ballistic …

Carbon nanotube transistors scaled to a 40-nanometer footprint

Q Cao, J Tersoff, DB Farmer, Y Zhu, SJ Han - Science, 2017 - science.org
The International Technology Roadmap for Semiconductors challenges the device research
community to reduce the transistor footprint containing all components to 40 nanometers …

Hysteresis-free carbon nanotube field-effect transistors

RS Park, G Hills, J Sohn, S Mitra, MM Shulaker… - ACS …, 2017 - ACS Publications
While carbon nanotube (CNT) field-effect transistors (CNFETs) promise high-performance
and energy-efficient digital systems, large hysteresis degrades these potential CNFET …

Beyond cmos

S Das, A Chen, M Marinella - 2021 IEEE International …, 2021 - ieeexplore.ieee.org
Dimensional and functional scaling 1 1 Functional Scaling: Suppose that a system has been
realized to execute a specific function in a given, currently available, technology. We say that …

Improving subthreshold swing to thermionic emission limit in carbon nanotube network film-based field-effect

C Zhao, D Zhong, C Qiu, J Han, Z Zhang… - Applied Physics …, 2018 - pubs.aip.org
In this letter, we explore the vertical scaling-down behavior of carbon nanotube (CNT)
network film field-effect transistors (FETs) and show that by using a high-efficiency gate …

[HTML][HTML] Channel length scaling behavior in transistors based on individual versus dense arrays of carbon nanotubes

GJ Brady, KR Jinkins, MS Arnold - Journal of Applied Physics, 2017 - pubs.aip.org
Recent advances in the solution-phase sorting and assembly of semiconducting single-
walled carbon nanotubes (SWCNTs) have enabled significant gains in the performance of …

Performance projections for ballistic carbon nanotube FinFET at circuit level

P Zhang, C Qiu, Z Zhang, L Ding, B Chen, L Peng - Nano Research, 2016 - Springer
A novel three-dimensional device structure for a carbon nanotube (CNT) fin field-effect
transistor (FinFET) is proposed and evaluated. We evaluated the potential of the CNT …

Variability in output characteristics of single-walled carbon nanotube thin-film transistors

J Chen, S Kumar - IEEE Transactions on Nanotechnology, 2018 - ieeexplore.ieee.org
Single-walled carbon nanotube (CNT) based thin-film transistors (TFTs) are promising
candidates for future electronic devices because of their excellent properties. However …