Strain engineering of two-dimensional materials for advanced electrocatalysts

X Xu, T Liang, D Kong, B Wang, L Zhi - Materials Today Nano, 2021 - Elsevier
Electrocatalysis is of great significance for the conversion and utilization of clean energy
industrially. Along with the pursuing of highly efficiency and selectivity, an exploded number …

Electrochemical intercalation in atomically thin van der Waals materials for structural phase transition and device applications

Y Li, H Yan, B Xu, L Zhen, CY Xu - Advanced Materials, 2021 - Wiley Online Library
In van der Waals (vdWs) materials and heterostructures, the interlayers are bonded by weak
vdWs interactions due to the lack of dangling bonds. The vdWs gap at the homo‐or …

Giant Valley-Zeeman Splitting from Spin-Singlet and Spin-Triplet Interlayer Excitons in WSe2/MoSe2 Heterostructure

T Wang, S Miao, Z Li, Y Meng, Z Lu, Z Lian, M Blei… - Nano …, 2019 - ACS Publications
Transition metal dichalcogenides (TMDCs) heterostructure with a type II alignment hosts
unique interlayer excitons with the possibility of spin-triplet and spin-singlet states. However …

Giant out-of-plane exciton emission enhancement in two-dimensional indium selenide via a plasmonic nanocavity

X Bao, X Wu, Y Ke, K Wu, C Jiang, B Wu, J Li… - Nano Letters, 2023 - ACS Publications
Out-of-plane (OP) exciton-based emitters in two-dimensional semiconductor materials are
attractive candidates for novel photonic applications, such as radially polarized sources …

Out-of-plane orientation of luminescent excitons in two-dimensional indium selenide

M Brotons-Gisbert, R Proux, R Picard… - Nature …, 2019 - nature.com
Van der Waals materials offer a wide range of atomic layers with unique properties that can
be easily combined to engineer novel electronic and photonic devices. A missing ingredient …

InSe: a two-dimensional semiconductor with superior flexibility

Q Zhao, R Frisenda, T Wang, A Castellanos-Gomez - Nanoscale, 2019 - pubs.rsc.org
Two-dimensional indium selenide (InSe) has attracted extensive attention recently due to its
record-high charge carrier mobility and photoresponsivity in the fields of electronics and …

Extraordinary Nonlinear Optical Interaction from Strained Nanostructures in van der Waals CuInP2S6

S Rahman, T Yildirim, M Tebyetekerwa, AR Khan… - ACS nano, 2022 - ACS Publications
Local strain engineering and structural modification of 2D materials furnish benevolent
control over their optoelectronic properties and provide an exciting approach to tune light …

Unusually Strong Near‐Infrared Photoluminescence of Highly Transparent Bulk InSe Flakes

J Geng, D Zhang, I Kim, HM Kim… - Advanced Functional …, 2024 - Wiley Online Library
Bulk γ‐InSe has a direct bandgap of 1.24 eV, which corresponds to near infrared
wavelengths (λ= 1.0 µm) useful in optoelectronic applications from biometric detectors to …

Strong Linearly Polarized Light Emission by Coupling Out-of-Plane Exciton to Anisotropic Gap Plasmon Nanocavity

K Xu, Z Zou, W Li, L Zhang, M Ge, T Wang, W Du - Nano Letters, 2024 - ACS Publications
With exceptional quantum confinement, 2D monolayer semiconductors support a strong
excitonic effect, making them an ideal platform for exploring light–matter interactions and as …

Room-temperature near-infrared excitonic lasing from mechanically exfoliated InSe microflake

C Li, L Zhao, Q Shang, R Wang, P Bai, J Zhang… - ACS …, 2021 - ACS Publications
The development of chip-level near-infrared laser sources using two-dimensional
semiconductors is imperative to maintain the architecture of van der Waals integrated optical …