The breakdown of thin oxides (7.9-32 nm) subjected to high-field current injection is
investigated in this study. The physical mechanism of breakdown is found to be localized …

This book raises the level of understanding of thermal design criteria. It provides the design
team with sufficient knowledge to help them evaluate device architecture trade-offs and the …

Time dependent dielectric breakdown (TDDB) data for 100Å of thermally grown SiO2 has
been analyzed using an Eyring model based on thermodynamic free energy considerations …

The effects of thinning the FLOTEX EEPROM tunnel oxide on its reliability are investigated
using capacitors and cell structures with oxide thickness ranging from 47 to 100 AA. A low …

It is little more than 15-years since the idea of Iddq testing was first proposed. Many
semiconductor companies now consider Iddq testing as an integral part of the overall testing …

A quantitative physical breakdown model for thin SiO 2 is developed. The physical
mechanism responsible fcor oxide breakdown has been reexamined and found to be hole …

The degradation of thin tunnel gate oxide under constant Fowler-Nordheim (FN) current
stress was studied using flash EEPROM structures. The degradation is a strong function of …

The effect of time-dependent stress voltage and temperature on the reliability of thin SiO/sub
2/films is incorporated in a quantitative defect-induced breakdown model. Based on this …

Gate oxide shorts are defects that must be detected to produce high-reliability ICs. These
problems will continue as devices are scaled down and oxide thicknesses are reduced to …

This book presents in summary the state of our knowledge of oxide reliability. The articles
have been written by experts who are among the most knowledgeable in the field. The book …