Comparative investigation into polarization field-dependent internal quantum efficiency of semipolar InGaN green light-emitting diodes: A strategy to mitigate green …
Semipolar InGaN-made green light-emitting diodes (LEDs) have sparked tremendous
interest within the photonics community in recent past as advantageous replacements for …
interest within the photonics community in recent past as advantageous replacements for …
[HTML][HTML] The effect of different AlGaN insertion layer thicknesses on the photoelectric properties of InGaN/AlGaN near UV light emitting diodes
C Xu, L Cai, J Zheng, H Lin, Z Chen, K Niu, Z Cheng… - Results in Physics, 2023 - Elsevier
In this paper, a near-ultraviolet LED structure was fabricated on a sapphire substrate by
using metal–organic chemical vapor deposition with an undoped AlGaN insertion layer …
using metal–organic chemical vapor deposition with an undoped AlGaN insertion layer …
Effect of EBL thickness on the performance of AlGaN deep ultraviolet light-emitting diodes with polarization-induced doping hole injection layer
Y Cao, Q Lv, T Yang, T Mi, X Wang, W Liu, J Liu - Micro and Nanostructures, 2023 - Elsevier
Numerical simulation results reveal that introducing polarization-induced doping hole
injection layer (HIL) in the DUV-LEDs results in a downward band-bending at the EBL/HIL …
injection layer (HIL) in the DUV-LEDs results in a downward band-bending at the EBL/HIL …
Research on the Electron-blocking Layers in the GaN-based LEDs
E Hai - Highlights in Science, Engineering and Technology, 2023 - drpress.org
The electron overflow happening in the active region of GaN-based light-emitting diodes
(LEDs) will decrease the rate of radiative recombination, leading to a reduction of light …
(LEDs) will decrease the rate of radiative recombination, leading to a reduction of light …
[PDF][PDF] Influence of the thickness of frontal platinum metallic layer on the electro-optical characteristics of GaN-based Schottky ultraviolet photodetectors.
F Bouzid, F Pezzimenti - Semiconductor Physics, Quantum Electronics & …, 2022 - iris.unirc.it
In this work, we evaluated the effect of the thickness of frontal metallic layer on the electro-
optical characteristics of an n-type gallium nitride (n-GaN)-based Schottky barrier ultraviolet …
optical characteristics of an n-type gallium nitride (n-GaN)-based Schottky barrier ultraviolet …