In our environment, the large availability of wasted heat has motivated the search for
methods to harvest heat. As a reliable way to supply energy, SiGe has been used for …

GeSn alloys have already attracted extensive attention due to their excellent properties and
wide-ranging electronic and optoelectronic applications. Both theoretical and experimental …

Group IV alloys have attracted interest in the drive to create Si compatible, direct band gap
materials for implementation in complementary metal oxide semiconductor (CMOS) and …

GeSn materials have attracted considerable attention for their tunable band structures and
high carrier mobilities, which serve well for future photonic and electronic applications. This …

Semiconductor nanowires present outstanding properties for implementation of the
thermoelectric effect, ie, the direct conversion of thermal to electrical energy, which can be …

After more than five decades, Moore's Law for transistors is approaching the end of the
international technology roadmap of semiconductors (ITRS). The fate of complementary …

We present a density functional theory investigation of the formation energies of intrinsic and
substitutional defects in Sn x Ge 1− x alloy as a function of both Sn composition and biaxial …

Hole doping has been widely used for altering the structural and electronic properties of
misfit-layered cobalties. In this work, the influence of hole doping, by Li+ doping to Sr2+ site …

In this study, the thermoelectric properties of boron phosphide-filled polyaniline (PANI/BP)
composites were examined. The composites containing different weight ratios of BP such as …

Abstract Alloying Ge with Sn is one of the promising ways for achieving Si compatible
optoelectronics. Here, GeSn nanowires (NWs) are realized via nano-crystallization of a …