2D materials for quantum information science
The transformation of digital computers from bulky machines to portable systems has been
enabled by new materials and advanced processing technologies that allow ultrahigh …
enabled by new materials and advanced processing technologies that allow ultrahigh …
Enhanced light–matter interaction in two-dimensional transition metal dichalcogenides
Abstract Two-dimensional (2D) transition metal dichalcogenide (TMDC) materials, such as
MoS 2, WS 2, MoSe 2, and WSe 2, have received extensive attention in the past decade due …
MoS 2, WS 2, MoSe 2, and WSe 2, have received extensive attention in the past decade due …
Oxidation-boosted charge trapping in ultra-sensitive van der Waals materials for artificial synaptic features
Exploitation of the oxidation behaviour in an environmentally sensitive semiconductor is
significant to modulate its electronic properties and develop unique applications. Here, we …
significant to modulate its electronic properties and develop unique applications. Here, we …
High mobilities in layered InSe transistors with indium‐encapsulation‐induced surface charge doping
Tunability and stability in the electrical properties of 2D semiconductors pave the way for
their practical applications in logic devices. A robust layered indium selenide (InSe) field …
their practical applications in logic devices. A robust layered indium selenide (InSe) field …
Indirect to direct gap crossover in two-dimensional InSe revealed by angle-resolved photoemission spectroscopy
Atomically thin films of III–VI post-transition metal chalcogenides (InSe and GaSe) form an
interesting class of two-dimensional semiconductors that feature a strong variation of their …
interesting class of two-dimensional semiconductors that feature a strong variation of their …
Interlayer Band‐to‐Band Tunneling and Negative Differential Resistance in van der Waals BP/InSe Field‐Effect Transistors
Q Lv, F Yan, N Mori, W Zhu, C Hu… - Advanced Functional …, 2020 - Wiley Online Library
Atomically thin layers of van der Waals (vdW) crystals offer an ideal material platform to
realize tunnel field‐effect transistors (TFETs) that exploit the tunneling of charge carriers …
realize tunnel field‐effect transistors (TFETs) that exploit the tunneling of charge carriers …
Gate‐Defined Quantum Confinement in CVD 2D WS2
Temperature‐dependent transport measurements are performed on the same set of
chemical vapor deposition (CVD)‐grown WS2 single‐and bilayer devices before and after …
chemical vapor deposition (CVD)‐grown WS2 single‐and bilayer devices before and after …
Raman spectroscopy of GaSe and InSe post-transition metal chalcogenides layers
III–VI post-transition metal chalcogenides (InSe and GaSe) are a new class of layered
semiconductors, which feature a strong variation of size and type of their band gaps as a …
semiconductors, which feature a strong variation of size and type of their band gaps as a …
InSe/hBN/graphite heterostructure for high-performance 2D electronics and flexible electronics
Abstract Two-dimensional (2D) materials as channel materials provide a promising
alternative route for future electronics and flexible electronics, but the device performance is …
alternative route for future electronics and flexible electronics, but the device performance is …
The roadmap of 2D materials and devices toward chips
A Liu, X Zhang, Z Liu, Y Li, X Peng, X Li, Y Qin, C Hu… - Nano-Micro Letters, 2024 - Springer
Due to the constraints imposed by physical effects and performance degradation, silicon-
based chip technology is facing certain limitations in sustaining the advancement of Moore's …
based chip technology is facing certain limitations in sustaining the advancement of Moore's …