Bandgap engineering of two-dimensional semiconductor materials

A Chaves, JG Azadani, H Alsalman… - npj 2D Materials and …, 2020 - nature.com
Semiconductors are the basis of many vital technologies such as electronics, computing,
communications, optoelectronics, and sensing. Modern semiconductor technology can trace …

[HTML][HTML] Two-dimensional materials toward terahertz optoelectronic device applications

Z Shi, H Zhang, K Khan, R Cao, Y Zhang, C Ma… - … of Photochemistry and …, 2022 - Elsevier
Abstract Two-dimensional (2D) materials have become a worldwide hot topic due to their
fascinating properties, including high carrier mobility, tunable bandgap, ultra-broadband …

Resonant tunnelling diodes based on twisted black phosphorus homostructures

PK Srivastava, Y Hassan, DJP de Sousa… - Nature …, 2021 - nature.com
Atomically thin materials can be used to build novel forms of conventional semiconductor
heterostructure devices. One such device is a resonant tunnelling diode, which can exhibit …

KITE: high-performance accurate modelling of electronic structure and response functions of large molecules, disordered crystals and heterostructures

SM João, M Anđelković, L Covaci… - Royal Society …, 2020 - royalsocietypublishing.org
We present KITE, a general purpose open-source tight-binding software for accurate real-
space simulations of electronic structure and quantum transport properties of large-scale …

Strain-engineered Majorana zero energy modes and Josephson state in black phosphorus

M Alidoust, M Willatzen, AP Jauho - Physical Review B, 2018 - APS
We develop a theory for strain control of Majorana zero energy modes and the Josephson
effect in black phosphorus (BP) devices proximity coupled to a superconductor. Employing …

Quantum Hall effect and semiconductor-to-semimetal transition in biased black phosphorus

S Yuan, E van Veen, MI Katsnelson, R Roldán - Physical Review B, 2016 - APS
We study the quantum Hall effect of two-dimensional electron gas in black phosphorus in the
presence of perpendicular electric and magnetic fields. In the absence of a bias voltage, the …

Anisotropic plasmons, excitons, and electron energy loss spectroscopy of phosphorene

B Ghosh, P Kumar, A Thakur, YS Chauhan… - Physical Review B, 2017 - APS
In this article, we explore the anisotropic electron energy loss spectrum (EELS) in monolayer
phosphorene based on ab initio time-dependent density-functional-theory calculations …

Multilayered black phosphorus: From a tight-binding to a continuum description

DJP De Sousa, LV De Castro, DR da Costa… - Physical Review B, 2017 - APS
We investigate the electronic properties of N-layer black phosphorus by means of an
analytical method based on a recently proposed tight-binding Hamiltonian involving 14 …

Integer and fractional quantum hall effect in ultrahigh quality few-layer black phosphorus transistors

J Yang, S Tran, J Wu, S Che, P Stepanov… - Nano Letters, 2018 - ACS Publications
As a high mobility two-dimensional semiconductor with strong structural and electronic
anisotropy, atomically thin black phosphorus (BP) provides a new playground for …

theory for phosphorene: Effective -factors, Landau levels, and excitons

PE Faria Junior, M Kurpas, M Gmitra, J Fabian - Physical Review B, 2019 - APS
Phosphorene, a single layer of black phosphorus, is a direct band gap two-dimensional
semiconductor with promising charge and spin transport properties. The electronic band …