[HTML][HTML] The role of 2-Dimensional materials for electronic devices
Dimensional materials play a vital role in science, engineering, and provide applications in
areas like electronics displays, wearable devices, the internet of things, transport, space …
areas like electronics displays, wearable devices, the internet of things, transport, space …
Ambipolar 2D semiconductors and emerging device applications
With the rise of 2D materials, new physics and new processing techniques have emerged,
triggering possibilities for the innovation of electronic and optoelectronic devices. Among …
triggering possibilities for the innovation of electronic and optoelectronic devices. Among …
A library of atomically thin 2D materials featuring the conductive‐point resistive switching phenomenon
Non‐volatile resistive switching (NVRS) is a widely available effect in transitional metal
oxides, colloquially known as memristors, and of broad interest for memory technology and …
oxides, colloquially known as memristors, and of broad interest for memory technology and …
Temperature-Dependent Conduction and Photoresponse in Few-Layer ReS2
The electrical behavior and the photoresponse of rhenium disulfide field-effect transistors
(FETs) have been widely studied; however, only a few works have investigated the …
(FETs) have been widely studied; however, only a few works have investigated the …
Hysteresis and Photoconductivity of Few‐Layer ReSe2 Field Effect Transistors Enhanced by Air Pressure
This study reports the optoelectronic characterization of few‐layer ReSe2field effect
transistors at different pressures. The output curves reveal dominant n‐type behavior and a …
transistors at different pressures. The output curves reveal dominant n‐type behavior and a …
Electric Transport in Few-Layer ReSe2 Transistors Modulated by Air Pressure and Light
We report the fabrication and optoelectronic characterization of field-effect transistors (FETs)
based on few-layer ReSe2. The devices show n-type conduction due to the Cr contacts that …
based on few-layer ReSe2. The devices show n-type conduction due to the Cr contacts that …
Analog Circuit Applications Based on All‐2D Ambipolar ReSe2 Field‐Effect Transistors
KC Lee, SH Yang, YS Sung, YM Chang… - Advanced Functional …, 2019 - Wiley Online Library
Complementary circuits based on 2D materials show great promise for next‐generation
electronics. An ambipolar all‐2D ReSe2 field‐effect transistor (FET) with a hexagonal boron …
electronics. An ambipolar all‐2D ReSe2 field‐effect transistor (FET) with a hexagonal boron …
Superior P-Type Switching in InSe Nanosheets for Complementary Multifunctional Systems
M Kim, D Yeom, Y Seok, J Song, H Jang, YT Choi… - Nano Letters, 2024 - ACS Publications
van der Waals (vdW) indium selenide (InSe) is receiving attention for its exceptional electron
mobility and moderate band gap, enabling various applications. However, the intrinsic n …
mobility and moderate band gap, enabling various applications. However, the intrinsic n …
The optical signature of few-layer ReSe2
Optical properties of thin layers of rhenium diselenide ( ReSe 2) with thicknesses ranging
from mono-(1 ML) to nona-layer (9 MLs) are demonstrated. The photoluminescence (PL) …
from mono-(1 ML) to nona-layer (9 MLs) are demonstrated. The photoluminescence (PL) …
Origin of the complex Raman tensor elements in single-layer triclinic ReSe2
Low symmetry 2D materials offer an alternative for the fabrication of optoelectronic devices
which are sensitive to light polarization. The investigation of electron–phonon interactions in …
which are sensitive to light polarization. The investigation of electron–phonon interactions in …