This article reviews the state-of-the-art millimeter-wave (mm-wave) power amplifiers (PAs),
focusing on broadband design techniques. An overview of the main solid-state technologies …

Since Nathan Sokal's invention of the class-E power amplifier (PA), the vast majority of class-
E results have been reported at kilohertz and millihertz frequencies, but the concept is …

Innovation and evolution are paramount where the demand for wideband, data-intensive
connectivity is ever-increasing, and the only constant is change. Standards that define the …

This paper proposes high-efficiency E-band power amplifiers (PAs) in SiGe-BiCMOS based
on a common-base output stage. A comparison between common-emitter and common …

Two solid-state power amplifiers with record high power added efficiency (PAE) and 100-
130 mW output power in 250 nm InP HBT are reported. The 71-95 GHz PA demonstrates …

A highly efficient sub-Watt X-band inverse class-F SiGe heterojunction bipolar transistor
(HBT) cascode power amplifier (PA) is presented. With a multi-harmonic resonance filter and …

Beyond fifth generation (5G) communication systems aim towards data rates in the tera bits
per second range, with improved and flexible coverage options, introducing many new …

Millimeter-wave and terahertz bands are very attractive for high-resolution radars and fifth-
generation communication and beyond; nevertheless, it is very challenging to achieve high …

This paper reviews current progress in our understanding of the reliability of SiGe HBTs and
the circuits built from them, including: 1) fundamental understanding of the multiple operative …

A high-efficiency W-band (75-110GHz) class-F 234 HBT power amplifier (PA) implemented
in a 250/370-GHz f_T/f_\max0.13-μm BiCMOS process is presented. The proposed class-F …