Two-dimensional (2D) semiconductors have shown great potential for electronic and
optoelectronic applications. However, their development is limited by a large Schottky …

The formation of a Schottky barrier at the metal-semiconductor interface is widely utilised in
semiconductor devices. With the emerging of novel Schottky barrier based nanoelectronics …

Although the two-dimensional transition metal dichalcogenides (TMDs) present excellent
electrical properties, the contact resistance at the interface of metal/TMDs limits the device …

Identifying the essence of doped Mott insulators is one of the major outstanding problems in
condensed matter physics and the key to understanding the high-temperature …

Dielectric-silicon interfaces are becoming ever more important to device performance.
Charge inside a surface dielectric layer is neutralized in Si leading to an accumulation or …

We demonstrate that the work function of Al-doped ZnO (AZO) can be tuned externally by
applying an electric field. Our experimental investigations using Kelvin probe force …

The author presents all aspects, in theory and experiments, of nanoelectronic devices
starting from field-effect transistors and leading to alternative device concepts such as …

First principles calculations are performed to investigate the structural and electronic
properties of MX 2 (M= Nb, Pt; X= S, Se) monolayers and their van der Waals (vdW) …

We use electronic transport and atom-probe tomography to study Zn O∶ Al/Si O 2/Si
Schottky diodes on lightly doped n-and p-type Si. We vary the carrier concentration in the …

Black phosphorus (BP) is a semiconducting material with a direct finite band gap in its
monolayer, attracting intense attention for its application in field-effect transistors. However …