Thanks to their peculiar shape and dimensions, semiconductor nanowires (NWs) are
emerging as building components of novel devices. The presence of wurtzite (WZ) phase in …

InAs nanowires (NWs) have been grown on semi-insulating InAs (111) B substrates by metal–
organic chemical vapor deposition catalyzed by 50, 100, and 150 nm-sized Au particles. The …

Flexible, substrate-free nanowire (NW) devices are desirable to overcome the extremely
challenging task of integrating III–V or III–N semiconductor devices such as LEDs and lasers …

Heat management mechanisms play a pivotal role in driving the design of nanowire (NW)-
based devices. In particular, the rate at which charge carriers cool down after an external …

Semiconductor nanowires (NWs) formed by non-nitride III–V compounds grow preferentially
with wurtzite (WZ) lattice. This is contrary to bulk and two-dimensional layers of the same …

We investigate the absorption properties of ensembles of wurtzite (WZ) InP nanowires (NWs)
by high-resolution polarization-resolved photoluminescence excitation (PLE) spectroscopy …

As an important semiconductor nanomaterial, InP nanowires (NWs) grown with a typical
vapor–liquid–solid mechanism are still restricted from their low electron mobility for practical …

Traction force microscopy (TFM) derives maps of cell-generated forces, typically in the
nanonewton range, transmitted to the extracellular environment upon actuation of complex …

Thanks to their uniqueness, nanowires allow the realization of novel semiconductor crystal
structures with yet unexplored properties, which can be key to overcome current …

The knowledge of the value and anisotropy of the gyromagnetic factor in semiconducting
nanowires (NWs) is crucial for their potential applications in several fields, such as …