Resonant interband tunneling diodes on silicon substrates are demonstrated using a Si/Si
0.5 Ge 0.5/Si heterostructure grown by low temperature molecular beam epitaxy which …

Antimony segregation in Ge (001) films grown by molecular beam epitaxy was studied. A
quantitative dependence of the Sb segregation ratio in Ge on growth temperature was …

Interband tunnel diodes which are compatible with Si-based processes such as, but not
limited to, CMOS and SiGe HBT fabrication. Interband tunnel diodes are disclosed (i) with …

Si/SiGe resonant interband tunnel diodes (RITDs) employing/spl delta/-doping spikes that
demonstrate negative differential resistance (NDR) at room temperature are presented …

We develop a unified kinetic model for surface segregation during vapor phase growth that
concisely and quantitatively describes the observed behavior in silicon-based systems. A …

An original approach to selective doping of Si by antimony (Sb) in molecular beam epitaxy
(MBE) is proposed and verified experimentally. This approach is based on controllable …

Tunneling devices in combination with transistors offer a way to extend the performance of
existing technologies by increasing circuit speed and decreasing static power dissipation …

We investigated how the electron concentration n in a 300-nm-thick Sb-doped n+-BaSi 2
layer grown by molecular beam epitaxy affected the contact resistance RC to surface …

Si interband tunnel diodes have been successfully fabricated by molecular beam epitaxy
and room temperature peak-to-valley current ratios of 1.7 have been achieved. The diodes …

An ultra-low-temperature process for homoepitaxial growth of high-quality, surface-confined,
Sb-doped silicon layers is presented. Non-equilibrium growth by molecular beam epitaxy …