WSe2 2D p‐type semiconductor‐based electronic devices for information technology: Design, preparation, and applications

Q Cheng, J Pang, D Sun, J Wang, S Zhang, F Liu… - InfoMat, 2020 - Wiley Online Library
The pioneering exfoliation of monolayer tungsten diselenide has greatly inspired
researchers toward semiconducting applications. WSe2 belongs to a family of transition …

Bright and Efficient Light‐Emitting Devices Based on 2D Transition Metal Dichalcogenides

T Ahmed, J Zha, KKH Lin, HC Kuo, C Tan… - Advanced …, 2023 - Wiley Online Library
Abstract 2D monolayer transition metal dichalcogenides (TMDCs) show great promise for
the development of next‐generation light‐emitting devices owing to their unique electronic …

Synthesis of bilayer borophene

C Chen, H Lv, P Zhang, Z Zhuo, Y Wang, C Ma, W Li… - Nature Chemistry, 2022 - nature.com
As the nearest-neighbour element to carbon, boron is theoretically predicted to have a
planar two-dimensional form, named borophene, with novel properties, such as Dirac …

Low-Temperature Ohmic Contact to Monolayer MoS2 by van der Waals Bonded Co/h-BN Electrodes

X Cui, EM Shih, LA Jauregui, SH Chae, YD Kim, B Li… - Nano …, 2017 - ACS Publications
Monolayer MoS2, among many other transition metal dichalcogenides, holds great promise
for future applications in nanoelectronics and optoelectronics due to its ultrathin nature …

Moiré Intralayer Excitons in a MoSe2/MoS2 Heterostructure

N Zhang, A Surrente, M Baranowski, DK Maude… - Nano …, 2018 - ACS Publications
Spatially periodic structures with a long-range period, referred to as a moiré pattern, can be
obtained in van der Waals bilayers in the presence of a small stacking angle or of lattice …

Electronics and optoelectronics of quasi-1D layered transition metal trichalcogenides

JO Island, AJ Molina-Mendoza, M Barawi, R Biele… - 2D …, 2017 - iopscience.iop.org
The isolation of graphene and transition metal dichalcongenides has opened a veritable
world to a great number of layered materials which can be exfoliated, manipulated, and …

Electrical control of charged carriers and excitons in atomically thin materials

K Wang, K De Greve, LA Jauregui, A Sushko… - Nature …, 2018 - nature.com
Electrical confinement and manipulation of charge carriers in semiconducting
nanostructures are essential for realizing functional quantum electronic devices,–. The …

Probing functional structures, defects, and interfaces of 2D transition metal dichalcogenides by electron microscopy

R Luo, M Gao, C Wang, J Zhu… - Advanced Functional …, 2024 - Wiley Online Library
Abstract 2D transition metal dichalcogenides (TMDs) exhibit remarkable properties that are
strongly influenced by their atomic structures, as well as by various types of defects and …

Spin-Valley Locking for In-Gap Quantum Dots in a MoS2 Transistor

R Krishnan, S Biswas, YL Hsueh, H Ma, R Rahman… - Nano Letters, 2023 - ACS Publications
Spins confined to atomically thin semiconductors are being actively explored as quantum
information carriers. In transition metal dichalcogenides (TMDCs), the hexagonal crystal …

Interactions and Magnetotransport through Spin-Valley Coupled Landau Levels in Monolayer

R Pisoni, A Kormányos, M Brooks, Z Lei, P Back… - Physical review …, 2018 - APS
The strong spin-orbit coupling and the broken inversion symmetry in monolayer transition
metal dichalcogenides results in spin-valley coupled band structures. Such a band structure …