Efficient infrared light emitters integrated on the mature Si technology platform could lead to
on-chip optical interconnects as deemed necessary for future generations of ultrafast …

We present expressions for the elastic and first-order piezoelectric tensor in (111)-oriented III-
V zinc-blende semiconductors. Moreover, an equation for the second-order piezoelectric …

The eight-band k· p formalism has been successfully applied to compute the electronic
properties of a wide range of semiconductor nanostructures in the past and can be …

We present a generalized and flexible plane-wave based implementation of the multiband k·
p formalism to study the electronic properties of semiconductor nanostructures. All …

This paper presents a comprehensive study of the intrinsic strain response of 3D
heterostructures arising from lattice mismatch. Combining materials with different lattice …

Using continuum elasticity theory and an eight-band k· p formalism, we study the electronic
properties of GaN nanowires with axial In x Ga1–x N insertions. The three-dimensional …

Optical properties of polar and nonpolar nitride quantum dots (QDs) are determined on the
basis of a microscopic theory which combines a continuum elasticity approach to the …

Carrier localization effects in III-N heterostructures are often studied in the frame of modified
continuum-based models utilizing a single-band effective mass approximation. However …

We have performed systematic studies of wurtzite GaN/AlN quantum dots grown on polar
and nonpolar surfaces. For this purpose, experimentally observed quantum dot geometries …

In this paper we systematically analyze the electronic structures of polar and nonpolar
wurtzite-InN/GaN quantum dots and their modification due to the quantum-confined Stark …