Abstract 2D transition metal chalcogenide (TMDC) materials, such as MoS2, have recently
attracted considerable research interest in the context of their use in ultrascaled devices …

The trend predicted by Moore's law sets forth strict requirements on the electronic properties
of materials that cannot always be satisfied by conventional semiconductors. Thus, the last …

By using the density functional theory, we propose that the two-dimensional (2D) SiGe is a
promising anode material of a sodium or potassium ion battery. We confirm the thermal and …

This book deals with the theoretical and computational simulation of monoperiodic
nanostructures for different classes of inorganic substances. These simulations are related …

From first-principles calculations, we proposed a silicon germanide (SiGe) analog of
silicene. This SiGe monolayer is stable and free from imaginary frequency in the phonon …

Ge–Si core–shell nanowires with surface disorder are shown to be very promising
candidates for thermoelectric applications. In atomistic calculations we find that surface …

Impurity doping of semiconducting nanowires has been predicted to become increasingly
inefficient as the wire diameter is reduced, because impurity states get deeper due to …

Finding a Si-based material with strong optical activity at the band-edge remains a
challenge despite decades of research. The interest lies in combining optical and electronic …

The broad and fascinating properties of nanowires and their synthesis have attracted great
attention as building blocks for functional devices at the nanoscale. Silicon and germanium …

This article presents a physics-based simulation study of a Si-core-SiGe-shell gate-all-
around (GAA) nanosheet FET (NSFET). The numerical simulations employ various models …