GaN-djoser pyramidal self powered UV photodetector for optical signal detection in rugged environments
Wireless communication under harsh environment using ultraviolet radiation remains a vital
field of research. We have reported the novel GaN pyramids of Djoser ultraviolet …
field of research. We have reported the novel GaN pyramids of Djoser ultraviolet …
Topological Bi2Se3/n-GaN Hybrid Structure for Enhanced and Self-Powered UV Photodetectors
Recent progress in topological insulating materials predicts a promising future for their
applications in developing innovative quantum, electronic, and optoelectronic devices. The …
applications in developing innovative quantum, electronic, and optoelectronic devices. The …
GaN nanotowers grown on Si (111) and functionalized with Au nanoparticles and ZnO nanorods for highly responsive UV photodetectors
Vertically aligned GaN nanotowers (NTs) were grown on the Si (111) substrate by plasma-
assisted molecular beam epitaxy to design a highly responsive ultraviolet (UV) …
assisted molecular beam epitaxy to design a highly responsive ultraviolet (UV) …
Ultrahigh Stability 3D TI Bi2Se3/MoO3 Thin Film Heterojunction Infrared Photodetector at Optical Communication Waveband
M Yang, Q Han, X Liu, J Han, Y Zhao… - Advanced Functional …, 2020 - Wiley Online Library
Abstract Infrared (IR) detection at 1300–1650 nm (optical communication waveband) is of
great significance due to its wide range of applications in commerce and military. Three …
great significance due to its wide range of applications in commerce and military. Three …
Potential monitoring during Ge electrochemical etching: Towards tunable double porosity layers
Abstract Porous Germanium (PGe) has emerged as a promising material for applications
such as substrate engineering, sensing, and energy storage, thanks to its uniquely versatile …
such as substrate engineering, sensing, and energy storage, thanks to its uniquely versatile …
A perovskite/porous GaN crystal hybrid structure for ultrahigh sensitivity ultraviolet photodetectors
Q Li, G Liu, J Yu, G Wang, S Wang, T Cheng… - Journal of Materials …, 2022 - pubs.rsc.org
Integration of a perovskite with third-generation semiconductors has attracted extensive
attention in numerous fields, such as wireless communication systems and spatial optical …
attention in numerous fields, such as wireless communication systems and spatial optical …
New Charge Carrier Transport‐Assisting Paths in Ultra‐Long GaN Microwire UV Photodetector
GaN‐based materials are the hottest research topic in UV photodetectors (PDs) because of
their low operating voltage, small volume, long lifetime, high‐temperature resistance, and …
their low operating voltage, small volume, long lifetime, high‐temperature resistance, and …
Ordered GaN nanorod arrays for self-powered photoelectrochemical ultraviolet photodetectors
K Chen, D Zhang, P Shao, T Zhi, J Zhao… - ACS Applied Nano …, 2022 - ACS Publications
Self-powered ultraviolet (UV) photodetectors have great application prospects in the fields of
UV astronomy, environmental monitoring, and space communication. In particular, the …
UV astronomy, environmental monitoring, and space communication. In particular, the …
Enhanced photoresponsivity in Bi2Se3 decorated GaN nanowall network-based photodetectors
Recently, highly responsive photodetectors which are capable of photodetection in a wide
range of wavelength spectra are in great demand. To fulfil this, photodetectors formed using …
range of wavelength spectra are in great demand. To fulfil this, photodetectors formed using …
Antireflective GaN nanoridge texturing by metal-assisted chemical etching via a thermally dewetted Pt catalyst network for highly responsive ultraviolet photodiodes
Antireflective (AR) surface texturing is a feasible way to boost the light absorption of
photosensitive materials and devices. As a plasma-free etching method, metal-assisted …
photosensitive materials and devices. As a plasma-free etching method, metal-assisted …