GaN-djoser pyramidal self powered UV photodetector for optical signal detection in rugged environments

P Vashishtha, L Goswami, SK Jain, N Aggarwal… - Journal of Alloys and …, 2023 - Elsevier
Wireless communication under harsh environment using ultraviolet radiation remains a vital
field of research. We have reported the novel GaN pyramids of Djoser ultraviolet …

Topological Bi2Se3/n-GaN Hybrid Structure for Enhanced and Self-Powered UV Photodetectors

R Kumar, V Aggarwal, A Yadav, S Gautam… - ACS Applied …, 2023 - ACS Publications
Recent progress in topological insulating materials predicts a promising future for their
applications in developing innovative quantum, electronic, and optoelectronic devices. The …

GaN nanotowers grown on Si (111) and functionalized with Au nanoparticles and ZnO nanorods for highly responsive UV photodetectors

L Goswami, N Aggarwal, M Singh… - ACS Applied Nano …, 2020 - ACS Publications
Vertically aligned GaN nanotowers (NTs) were grown on the Si (111) substrate by plasma-
assisted molecular beam epitaxy to design a highly responsive ultraviolet (UV) …

Ultrahigh Stability 3D TI Bi2Se3/MoO3 Thin Film Heterojunction Infrared Photodetector at Optical Communication Waveband

M Yang, Q Han, X Liu, J Han, Y Zhao… - Advanced Functional …, 2020 - Wiley Online Library
Abstract Infrared (IR) detection at 1300–1650 nm (optical communication waveband) is of
great significance due to its wide range of applications in commerce and military. Three …

Potential monitoring during Ge electrochemical etching: Towards tunable double porosity layers

T Hanuš, L Mouchel, B Ilahi, A Dupuy, J Cho… - Electrochimica …, 2024 - Elsevier
Abstract Porous Germanium (PGe) has emerged as a promising material for applications
such as substrate engineering, sensing, and energy storage, thanks to its uniquely versatile …

A perovskite/porous GaN crystal hybrid structure for ultrahigh sensitivity ultraviolet photodetectors

Q Li, G Liu, J Yu, G Wang, S Wang, T Cheng… - Journal of Materials …, 2022 - pubs.rsc.org
Integration of a perovskite with third-generation semiconductors has attracted extensive
attention in numerous fields, such as wireless communication systems and spatial optical …

New Charge Carrier Transport‐Assisting Paths in Ultra‐Long GaN Microwire UV Photodetector

DY Um, B Chandran, JY Kim, JK Oh… - Advanced Functional …, 2023 - Wiley Online Library
GaN‐based materials are the hottest research topic in UV photodetectors (PDs) because of
their low operating voltage, small volume, long lifetime, high‐temperature resistance, and …

Ordered GaN nanorod arrays for self-powered photoelectrochemical ultraviolet photodetectors

K Chen, D Zhang, P Shao, T Zhi, J Zhao… - ACS Applied Nano …, 2022 - ACS Publications
Self-powered ultraviolet (UV) photodetectors have great application prospects in the fields of
UV astronomy, environmental monitoring, and space communication. In particular, the …

Enhanced photoresponsivity in Bi2Se3 decorated GaN nanowall network-based photodetectors

V Aggarwal, S Gautam, A Yadav, R Kumar… - Materials Research …, 2024 - Elsevier
Recently, highly responsive photodetectors which are capable of photodetection in a wide
range of wavelength spectra are in great demand. To fulfil this, photodetectors formed using …

Antireflective GaN nanoridge texturing by metal-assisted chemical etching via a thermally dewetted Pt catalyst network for highly responsive ultraviolet photodiodes

Y Liao, YJ Kim, J Lai, JH Seo, M Kim - ACS Applied Materials & …, 2023 - ACS Publications
Antireflective (AR) surface texturing is a feasible way to boost the light absorption of
photosensitive materials and devices. As a plasma-free etching method, metal-assisted …