The fundamental surface science of wurtzite gallium nitride
VM Bermudez - Surface Science Reports, 2017 - Elsevier
A review is presented that covers the experimental and theoretical literature relating to the
preparation, electronic structure and chemical and physical properties of the surfaces of the …
preparation, electronic structure and chemical and physical properties of the surfaces of the …
Multiscale modeling of plasma–surface interaction—General picture and a case study of Si and SiO2 etching by fluorocarbon-based plasmas
P Vanraes, S Parayil Venugopalan… - Applied Physics …, 2021 - pubs.aip.org
The physics and chemistry of plasma–surface interaction is a broad domain relevant to
various applications and several natural processes, including plasma etching for …
various applications and several natural processes, including plasma etching for …
Structural variability and dynamics of the P3HT/PCBM interface and its effects on the electronic structure and the charge-transfer rates in solar cells
Using a range of realistic interface geometries obtained from a molecular dynamics
simulation we study the effects of different microscopic atomic arrangements on the …
simulation we study the effects of different microscopic atomic arrangements on the …
Probing hydrophilic interface of solid/liquid-water by nanoultrasonics
Despite the numerous devoted studies, water at solid interfaces remains puzzling. An
ongoing debate concerns the nature of interfacial water at a hydrophilic surface, whether it is …
ongoing debate concerns the nature of interfacial water at a hydrophilic surface, whether it is …
High-performing photoanodes with a cost-effective n-InGaN/p-Cu2O heterostructure for water splitting
P Huang, D Hu, Q Zhao, T Li, B Xu - International Journal of Hydrogen …, 2023 - Elsevier
InGaN nanorods are highly desirable candidates for photoelectrochemical water splitting
photoelectrodes because of their inherent material properties. However, their use is …
photoelectrodes because of their inherent material properties. However, their use is …
Valence force field for layered double hydroxide materials based on the parameterization of octahedrally coordinated metal cations
ST Zhang, H Yan, M Wei, DG Evans… - The Journal of Physical …, 2012 - ACS Publications
A valence force field named LDHFF was systematically developed for the layered double
hydroxide (LDH) materials. Its potential function was referred from the polymer consistent …
hydroxide (LDH) materials. Its potential function was referred from the polymer consistent …
Density functional study of the first wetting layer on the GaN (0001) surface
The first wetting layer on the GaN (0001) surface has been investigated at the level of
density functional theory. Many water adsorption models have been analyzed and it is …
density functional theory. Many water adsorption models have been analyzed and it is …
Exploring gallium nitride nanosheets capability as a high-salt rejection membrane material: A molecular dynamics study
MR Madhoush, MH Sarrafzadeh - Chemical Engineering Science, 2024 - Elsevier
Discovering new materials or exploring novel applications for known materials are two
exciting research areas in nanotechnology. The significant difference between atoms' …
exciting research areas in nanotechnology. The significant difference between atoms' …
Moisture dependent wear mechanisms of gallium nitride
Ultralow wear nature of gallium nitride (GaN) has been revealed recently. The wear rate for
GaN has a significant dependence on humidity, ranging from 9× 10− 9 mm 3/Nm to 9.5× 10 …
GaN has a significant dependence on humidity, ranging from 9× 10− 9 mm 3/Nm to 9.5× 10 …
Nonlocality and Strength of Interatomic Interactions Inducing the Topological Phonon Phase Transition
D Tang - arXiv preprint arXiv:2404.12557, 2024 - arxiv.org
Understanding the phonon behavior in semiconductors from a topological physics
perspective provides more opportunities to uncover extraordinary physics related to phonon …
perspective provides more opportunities to uncover extraordinary physics related to phonon …