Applications and impacts of nanoscale thermal transport in electronics packaging
RJ Warzoha, AA Wilson… - Journal of …, 2021 - asmedigitalcollection.asme.org
This review introduces relevant nanoscale thermal transport processes that impact thermal
abatement in power electronics applications. Specifically, we highlight the importance of …
abatement in power electronics applications. Specifically, we highlight the importance of …
[HTML][HTML] A perspective on the electro-thermal co-design of ultra-wide bandgap lateral devices
Fundamental research and development of ultra-wide bandgap (UWBG) semiconductor
devices are under way to realize next-generation power conversion and wireless …
devices are under way to realize next-generation power conversion and wireless …
Device-level thermal management of gallium oxide field-effect transistors
B Chatterjee, K Zeng, CD Nordquist… - IEEE Transactions …, 2019 - ieeexplore.ieee.org
The ultrawide bandgap (UWBG)(~ 4.8 eV) and melt-grown substrate availability of β-Ga 2 O
3 give promise to the development of next-generation power electronic devices with …
3 give promise to the development of next-generation power electronic devices with …
Electrothermal simulation and thermal performance study of GaN vertical and lateral power transistors
In this paper, we present self-consistent electrothermal simulations of single-finger and
multifinger GaN vertical metal-oxide-semiconductor field-effect transistors (MOSFETs) and …
multifinger GaN vertical metal-oxide-semiconductor field-effect transistors (MOSFETs) and …
Nanoscale electro-thermal interactions in AlGaN/GaN high electron mobility transistors
Self-heating in AlGaN/GaN high electron mobility transistors (HEMTs) negatively impacts
device performance and reliability. Under nominal operating conditions, a hot-spot in the …
device performance and reliability. Under nominal operating conditions, a hot-spot in the …
A review of thermoreflectance techniques for characterizing wide bandgap semiconductors' thermal properties and devices' temperatures
Thermoreflectance-based techniques, such as pump–probe thermoreflectance (pump–
probe TR) and thermoreflectance thermal imaging (TTI), have emerged as the powerful and …
probe TR) and thermoreflectance thermal imaging (TTI), have emerged as the powerful and …
A review of Raman thermography for electronic and opto-electronic device measurement with submicron spatial and nanosecond temporal resolution
M Kuball, JW Pomeroy - IEEE Transactions on Device and …, 2016 - ieeexplore.ieee.org
We review the Raman thermography technique, which has been developed to determine the
temperature in and around the active area of semiconductor devices with submicron spatial …
temperature in and around the active area of semiconductor devices with submicron spatial …
Channel temperature analysis of GaN HEMTs with nonlinear thermal conductivity
A Darwish, AJ Bayba, HA Hung - IEEE Transactions on electron …, 2015 - ieeexplore.ieee.org
This paper presents an enhanced, closed-form expression for the thermal resistance, and
thus, the channel temperature of AlGaN/gallium nitride (GaN) HEMTs, including the effect of …
thus, the channel temperature of AlGaN/gallium nitride (GaN) HEMTs, including the effect of …
Investigation of high-electric-field degradation effects in AlGaN/GaN HEMTs
M Faqir, G Verzellesi, G Meneghesso… - … on Electron Devices, 2008 - ieeexplore.ieee.org
High-electric-field degradation phenomena are investigated in GaN-capped AlGaN/GaN
HEMTs by comparing experimental data with numerical device simulations. Under power …
HEMTs by comparing experimental data with numerical device simulations. Under power …
Bias dependence of non-Fourier heat spreading in GaN HEMTs
In this article, self-heating in gallium nitride (GaN) high-electron-mobility transistors (HEMTs)
is studied by combining the technology computer-aided design (TCAD) and phonon Monte …
is studied by combining the technology computer-aided design (TCAD) and phonon Monte …