A review of gan hemt dynamic on-resistance and dynamic stress effects on field distribution
Gallium nitride (GaN) is an emerging wide-bandgap material with superior physical
characteristics, including critical electric field, electron mobility, and specific on-resistance …
characteristics, including critical electric field, electron mobility, and specific on-resistance …
GaN-based power devices: Physics, reliability, and perspectives
Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the
fabrication of power devices. Among the semiconductors for which power devices are …
fabrication of power devices. Among the semiconductors for which power devices are …
An overview on analyses and suppression methods of trapping effects in AlGaN/GaN HEMTs
R Ye, X Cai, C Du, H Liu, Y Zhang, X Duan… - IEEE Access, 2021 - ieeexplore.ieee.org
Due to the excellent material characteristics, AlGaN/GaN HEMTs are widely used in high
power and high frequency applications. However, the existence of damages, defects and …
power and high frequency applications. However, the existence of damages, defects and …
Deep-level characterization in GaN HEMTs-Part I: Advantages and limitations of drain current transient measurements
This paper critically investigates the advantages and limitations of the current-transient
methods used for the study of the deep levels in GaN-based high-electron mobility …
methods used for the study of the deep levels in GaN-based high-electron mobility …
Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate, and surface passivation
Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate,
and surface passivation | Journal of Applied Physics | AIP Publishing Skip to Main Content …
and surface passivation | Journal of Applied Physics | AIP Publishing Skip to Main Content …
[图书][B] Graphene science handbook, six-volume set
Graphene is the strongest material ever studied and can be an efficient substitute for silicon.
This six-volume handbook focuses on fabrication methods, nanostructure and atomic …
This six-volume handbook focuses on fabrication methods, nanostructure and atomic …
Methodology for the study of dynamic ON-resistance in high-voltage GaN field-effect transistors
D Jin, JA del Alamo - IEEE Transactions on Electron Devices, 2013 - ieeexplore.ieee.org
We have developed a new methodology to investigate the dynamic ON-resistance (R ON) of
high-voltage GaN field-effect transistors. The new technique allows the study of R ON …
high-voltage GaN field-effect transistors. The new technique allows the study of R ON …
Low-loss and high-voltage III-nitride transistors for power switching applications
M Kuzuhara, H Tokuda - IEEE Transactions on Electron …, 2014 - ieeexplore.ieee.org
This paper describes recent technological advances on III-nitride-based transistors for
power switching applications. Focuses are placed on the progress toward enhancing the …
power switching applications. Focuses are placed on the progress toward enhancing the …
Mechanism of PEALD-grown AlN passivation for AlGaN/GaN HEMTs: Compensation of interface traps by polarization charges
The physical mechanism of passivation of AlGaN/GaN HEMTs by AlN thin film prepared with
plasma-enhanced atomic layer deposition (PEALD) is investigated by characterizing Ni …
plasma-enhanced atomic layer deposition (PEALD) is investigated by characterizing Ni …
Deep-level traps in AlGaN/GaN-and AlInN/GaN-based HEMTs with different buffer doping technologies
Deep-level traps in AlGaN/GaNand AlInN/GaN-based HEMTs with different buffer doping
technologies are identified by drain current transient spectroscopy (DCTS) and low …
technologies are identified by drain current transient spectroscopy (DCTS) and low …