A Graphical Method to Study Electrostatic Potentials of 25 nm Channel Length DG SOI MOSFETs

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M Hebali, HAA Menaouer Bennaoum… - Journal of Engineering …, 2021 - jestr.org
The effects of temperature on the electrical properties of double gate DG-MOSFETs
transistors in 4H-SiC and 6H-SiC technologies have been investigated and compared with …
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