Standards for the characterization of endurance in resistive switching devices

M Lanza, R Waser, D Ielmini, JJ Yang, L Goux… - ACS …, 2021 - ACS Publications
Resistive switching (RS) devices are emerging electronic components that could have
applications in multiple types of integrated circuits, including electronic memories, true …

Organic memory and memristors: from mechanisms, materials to devices

L Yuan, S Liu, W Chen, F Fan… - Advanced Electronic …, 2021 - Wiley Online Library
Facing the exponential growth of data digital communications and the advent of artificial
intelligence, there is an urgent need for information technologies with huge storage capacity …

Hybrid 2D–CMOS microchips for memristive applications

K Zhu, S Pazos, F Aguirre, Y Shen, Y Yuan, W Zheng… - Nature, 2023 - nature.com
Exploiting the excellent electronic properties of two-dimensional (2D) materials to fabricate
advanced electronic circuits is a major goal for the semiconductor industry,. However, most …

Towards oxide electronics: a roadmap

M Coll, J Fontcuberta, M Althammer, M Bibes… - Applied surface …, 2019 - orbit.dtu.dk
At the end of a rush lasting over half a century, in which CMOS technology has been
experiencing a constant and breathtaking increase of device speed and density, Moore's …

Nanoionic memristive phenomena in metal oxides: the valence change mechanism

R Dittmann, S Menzel, R Waser - Advances in Physics, 2021 - Taylor & Francis
This review addresses resistive switching devices operating according to the bipolar
valence change mechanism (VCM), which has become a major trend in electronic materials …

BiFeO3 epitaxial thin films and devices: past, present and future

D Sando, A Barthélémy, M Bibes - Journal of Physics …, 2014 - iopscience.iop.org
The celebrated renaissance of the multiferroics family over the past ten years has also been
that of its most paradigmatic member, bismuth ferrite (BiFeO 3). Known since the 1960s to be …

Light-gated memristor with integrated logic and memory functions

H Tan, G Liu, H Yang, X Yi, L Pan, J Shang, S Long… - ACS …, 2017 - ACS Publications
Memristive devices are able to store and process information, which offers several key
advantages over the transistor-based architectures. However, most of the two-terminal …

Nanoionics‐enabled memristive devices: strategies and materials for neuromorphic applications

Z Wang, L Wang, M Nagai, L Xie, M Yi… - Advanced Electronic …, 2017 - Wiley Online Library
Memristors have been intensively studied in recent years as potential building blocks for the
construction of versatile neuromorphic architectures. The prevalent developments focus on …

Nanoscale resistive switching memory devices: a review

S Slesazeck, T Mikolajick - Nanotechnology, 2019 - iopscience.iop.org
In this review the different concepts of nanoscale resistive switching memory devices are
described and classified according to their I–V behaviour and the underlying physical …

Progress in BiFeO 3-based heterostructures: materials, properties and applications

L Yin, W Mi - Nanoscale, 2020 - pubs.rsc.org
BiFeO3-based heterostructures have attracted much attention for potential applications due
to their room-temperature multiferroic properties, proper band gaps and ultrahigh …