Monolithic integration of RF-MEMS within CMOS
A Morris - 2015 International Symposium on VLSI Technology …, 2015 - ieeexplore.ieee.org
The evolution of mobile air interface standards continues to proliferate the modes and bands
that must be supported in mobile devices. The mobile RF front-end has seen limited …
that must be supported in mobile devices. The mobile RF front-end has seen limited …
CMOS integrated digital RF MEMS capacitors
SP Natarajan, SJ Cunningham… - 2011 IEEE 11th …, 2011 - ieeexplore.ieee.org
A zero-level packaged, digitally switched, RF MEMS capacitor array has been developed
within a mass production capable HV RF CMOS process. These RF MEMS capacitors are …
within a mass production capable HV RF CMOS process. These RF MEMS capacitors are …
Physical analysis of a biomimetic microphone with a central-supported (CS) circular diaphragm for sound source localization
This paper presents a physical analysis of the biomimetic microphone designed with a
central-supported (CS) diaphragm for the sound source localization. A clover-stem-like CS …
central-supported (CS) diaphragm for the sound source localization. A clover-stem-like CS …
Tunable capacitor series/shunt design for integrated tunable wireless front end applications
DR DeReus, S Natarajan… - 2011 IEEE 24th …, 2011 - ieeexplore.ieee.org
This paper describes the design of a novel tunable RF-MEMS capacitor that is fabricated in
a 0.18 μm monolithically integrated RF-MEMS, 50 V LDMOS, 5 V CMOS technology. The …
a 0.18 μm monolithically integrated RF-MEMS, 50 V LDMOS, 5 V CMOS technology. The …
CMOS-MEMS variable capacitors using electrothermal actuation
J Reinke, GK Fedder… - Journal of …, 2010 - ieeexplore.ieee.org
Microelectromechanical-systems variable capacitors which are monolithically integrated
with CMOS using a post-CMOS fabrication process are presented. The variable capacitors …
with CMOS using a post-CMOS fabrication process are presented. The variable capacitors …
MEMS varactor enabled frequency-reconfigurable LNA and PA in the upper UHF band
A Jajoo, L Wang, T Mukherjee - 2009 IEEE MTT-S International …, 2009 - ieeexplore.ieee.org
A low-power frequency-reconfigurable narrowband LNA and PA have been designed using
tunable RF-MEMS passives in a 0.35 mum BiCMOS process. The LNA's operating …
tunable RF-MEMS passives in a 0.35 mum BiCMOS process. The LNA's operating …
[PDF][PDF] High Dynamic Range CMOS-MEMS Capacitive Accelerometer Array with Drift Compensation.
MG Guney - 2018 - kilthub.cmu.edu
This thesis explains the design, fabrication and characterization steps of a high dynamic
range CMOS-MEMS capacitive accelerometer array and on-chip environmental sensors for …
range CMOS-MEMS capacitive accelerometer array and on-chip environmental sensors for …
A 3.4 GHz to 4.3 GHz frequency-reconfigurable class E power amplifier with an integrated CMOS-MEMS LC balun
L Wang, T Mukherjee - 2010 IEEE Radio Frequency Integrated …, 2010 - ieeexplore.ieee.org
A monolithically integrated differential class E power amplifier capable of dynamically
switching between 3.4 GHz and 4.3 GHz operation has been designed and fabricated in a …
switching between 3.4 GHz and 4.3 GHz operation has been designed and fabricated in a …
RF-CMOS-MEMS based frequency-reconfigurable amplifiers
T Mukherjee, GK Fedder - 2009 IEEE Custom Integrated …, 2009 - ieeexplore.ieee.org
Chips from a foundry RF process are post-processed to release MEMS passive devices and
enable single-chip reconfigurable circuits. A MEMS variable capacitor, capable of 7: 1 tuning …
enable single-chip reconfigurable circuits. A MEMS variable capacitor, capable of 7: 1 tuning …
Reconfigurable high efficiency class-F power amplifier using CMOS-MEMS technology
M Gilasgar - 2017 - upcommons.upc.edu
The increasing demand for wireless products to be part of our daily lives brings the need for
longer battery lifetime, smaller size and lower cost. To increase battery lifetime, high …
longer battery lifetime, smaller size and lower cost. To increase battery lifetime, high …