The purpose of this paper is to obtain the development direction for improving the reliability
of bond wires effectively in power electronics through overviewing the state-of-the-art of the …

Reliability-oriented evaluation of power module has emerged as a pivotal aspect in
addressing the demands of high-reliability design and cost-effective maintenance for electric …

Lift-off of aluminum bond wires is one of the main failure mechanisms of insulated gate
bipolar transistor (IGBT) modules. Its root cause is the crack propagation, which causes …

To speed up the testing time in a power cycling test, normally high-acceleration factors
induced by high temperature swings are applied. With a classical Coffin–Manson lifetime …

A new panel-level silicon carbide (SiC) metal oxide semiconductor field effect transistor
(MOSFET) power module was developed by using the fan-out and embedded chip …

This article presents a cost-effective prognostic method for the bond wires in the insulated-
gate bipolar transistor (IGBT). Consider that the crack propagation in the wire bond leads to …

In this paper, a new model for wirebond degradation during power cycling in IGBT power
module is proposed. This model is based on experimental crack propagation analyses and …

Silicon carbide (SiC), as one of the most favorite wide band gap semiconductor materials, is
often applied in power electronics nowadays. The reliability of SiC packages, however …

This article analyzes the problem of modeling the lifetime in semiconductor power devices
subjected to power cycling stress using artificial neural networks (ANNs). This article …

Power electronics converters (PECs) are responsible for efficiently converting electrical
energy between power generators, storage systems and power consumers/loads. The PECs …