Droplet epitaxy of semiconductor nanostructures for quantum photonic devices

M Gurioli, Z Wang, A Rastelli, T Kuroda… - Nature materials, 2019 - nature.com
The long dreamed 'quantum internet'would consist of a network of quantum nodes (solid-
state or atomic systems) linked by flying qubits, naturally based on photons, travelling over …

Observation of excitonic fine structure in a 2D transition-metal dichalcogenide semiconductor

J Shang, X Shen, C Cong, N Peimyoo, B Cao… - ACS …, 2015 - ACS Publications
Two-dimensional (2D) semiconductors, such as transition-metal dichalcogenide monolayers
(TMD 1Ls), have attracted increasing attention owing to the underlying fundamental physics …

Universal Recovery of the Energy-Level Degeneracy of Bright Excitons in InGaAs<? format?> Quantum Dots without a Structure Symmetry

R Trotta, E Zallo, C Ortix, P Atkinson, JD Plumhof… - Physical review …, 2012 - APS
The lack of structural symmetry which usually characterizes semiconductor quantum dots
lifts the energetic degeneracy of the bright excitonic states and hampers severely their use …

Experimental methods of post-growth tuning of the excitonic fine structure splitting in semiconductor quantum dots

JD Plumhof, R Trotta, A Rastelli, OG Schmidt - Nanoscale research letters, 2012 - Springer
Deterministic sources of polarization entangled photon pairs on demand are considered as
important building blocks for quantum communication technology. It has been demonstrated …

Symmetric quantum dots as efficient sources of highly entangled photons: Violation of Bell's inequality without spectral and temporal filtering

T Kuroda, T Mano, N Ha, H Nakajima, H Kumano… - Physical Review B …, 2013 - APS
An ideal emitter of entangled photon pairs combines the perfect symmetry of an atom with
the convenient electrical trigger of light sources based on semiconductor quantum dots. Our …

Independent wavelength and density control of uniform GaAs/AlGaAs quantum dots grown by infilling self-assembled nanoholes

P Atkinson, E Zallo, OG Schmidt - Journal of applied Physics, 2012 - pubs.aip.org
Very low density growth of GaAs quantum dots in self-assembled nanoholes created by
gallium droplet etching is demonstrated. The emission energy of the quantum dots can be …

High-yield fabrication of entangled photon emitters for hybrid quantum networking using high-temperature droplet epitaxy

F Basso Basset, S Bietti, M Reindl, L Esposito… - Nano …, 2018 - ACS Publications
Several semiconductor quantum dot techniques have been investigated for the generation
of entangled photon pairs. Among the other techniques, droplet epitaxy enables the control …

Self-assembly of symmetric GaAs quantum dots on (111) A substrates: Suppression of fine-structure splitting

T Mano, M Abbarchi, T Kuroda… - Applied physics …, 2010 - iopscience.iop.org
Great suppression of fine-structure splitting (FSS) is demonstrated in self-assembled GaAs
quantum dots (QDs) grown on AlGaAs (111) A surface. Due to the three-fold rotational …

Impact of heavy hole-light hole coupling on optical selection rules in GaAs quantum dots

T Belhadj, T Amand, A Kunold, CM Simon… - Applied Physics …, 2010 - pubs.aip.org
We report strong heavy hole-light hole mixing in GaAs quantum dots grown by droplet
epitaxy. Using the neutral and charged exciton emission as a monitor we observe the direct …

Selective carrier injection into patterned arrays of pyramidal quantum dots for entangled photon light-emitting diodes

TH Chung, G Juska, ST Moroni, A Pescaglini… - Nature …, 2016 - nature.com
Scalability and foundry compatibility (as apply to conventional silicon-based integrated
computer processors, for example) in developing quantum technologies are major …