A thin film forming method includes: a first operation of supplying a source gas at a first flow
rate into a reactor; a second operation of purging the source gas in the reactor to an exhaust …

The method relates to a method of forming an enhanced unexposed photoresist layer from
an unexposed photoresist layer on a substrate by increasing the sensitivity of the unexposed …

2020-11-07 Assigned to ASM IP HOLDING BV reassignment ASM IP HOLDING BV
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors …

The disclosure relates to substrate processing apparatus, with a first and second reactor,
each reactor configured with an elevator to transfer a boat with substrates to the reactor. The …

2017-02-28 Assigned to ASM IP HOLDING BV reassignment ASM IP HOLDING BV
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors …

A sequential infiltration synthesis apparatus comprising: a reaction chamber constructed and
arranged to hold at least a first substrate; a precursor distribution and removal system to …

A substrate processing apparatus having improved uniformity and speed of reaction is
provided. A substrate processing apparatus includes a body portion comprising a discharge …

There is provided a method of forming a layer, comprising depositing a seed layer on the
substrate and depositing a bulk layer on the seed layer. Depositing the seed layer …

There is provided a method and apparatus for forming a layer, by sequentially repeating a
layer deposition cycle to process a substrate disposed in a reaction chamber. The …

A plasma supply unit includes a first conductive portion, a second conductive portion having
at least a part extending to overlap the first conductive portion, and a ground shield located …