In recent years, carbon nanotubes have received widespread attention as promising carbon-
based nanoelectronic devices. Due to their exceptional physical, chemical, and electrical …

Comparative benchmarking of a graphene nanoribbon field‐effect transistor (GNRFET) and
a nanoscale metal‐oxide‐semiconductor field‐effect transistor (nano‐MOSFET) for …

Graphene Nanoribbon (GNR) has shown to have great advantages over conventional
Silicon for the next generation of CMOS. In this paper, graphene nanoribbon field-effect …

This research emphasizes the modelling and simulation of electronic properties of
Graphene Nanoribbon (GNR) of varying widths and lengths, by employing single-neighbour …

The physical constraints of ever‐shrinking CMOS transistors are rapidly approaching
atomistic and quantum mechanical limits. Therefore, research is now directed towards the …

Long channel carbon nanotube transistor (CNT) can be used to overcome the high electric
field effects in nanoscale length silicon channel. When maximum electric field is reduced …

Graphene nanoribbons (GNRs) is one of the promising candidates that can push the current
silicon-based technology beyond its limits. Narrow strips of graphene or nanoribbons can …

This work presents a comprehensive study of the influence of channel engineering on the
switching, high frequency characteristics, and circuit-level performance of carbon nanotube …

Transport in nanowires and nanographene with emphasis on nanotubes is reviewed from
classical to quantum, low-field to high-field, nondegenrate to degenerate, scattering limited …

The flexible and stretchable electronics demands carbon-based nanostructures such as
carbon nanotubes and graphene owing to their extraordinary physical, chemical, and …