An equivalent circuit model of the negative bias temperature instability (NBTI) effect in 65 nm
P-MOSFET is presented in this paper. Based on an existing P-MOSFET model of a 65 nm …

The field-effect transistor (FET) has become a key technology that has shaped electronic
applications in a wide range of industries. These transistors are the building blocks of …

In this paper, we propose an accurate model for the read static noise margin (SNM). The
model includes the effects of soft oxide breakdown (SBD), negative and positive bias …

In this paper, we propose a read SNM model which considers soft oxide breakdown (SBD). It
makes use of a resistance for modeling the soft oxide breakdown which adds two terms to …

In this work, we present an analytical model for calculating the read margin of static random
access memory (SRAM) cells as a function of different transistors parameters. Using this …

SRAM memories constitute a considerable fraction of modern VLSI designs and consist of a
single system repeated thousands of times. Thus, design of these singular bitcells is …

Today's trend is the increase of memory density for handling the huge number of data
generated by the numerous applications integrated within a single device and their parallel …

In this work, we present an analytical model for calculating the Read Margin of SRAM cells
as a function of different transistors parameters. Using this model and assuming normal …