A review of megahertz current sensors for megahertz power converters
Z Xin, H Li, Q Liu, PC Loh - IEEE Transactions on Power …, 2021 - ieeexplore.ieee.org
Within a power converter, multiple currents are usually measured for control, protection,
and/or monitoring. They are therefore important sources of information, which must …
and/or monitoring. They are therefore important sources of information, which must …
A review of traditional helical to recent miniaturized printed circuit board Rogowski coils for power-electronic applications
Y Shi, Z Xin, PC Loh, F Blaabjerg - IEEE Transactions on Power …, 2020 - ieeexplore.ieee.org
Latest wide-bandgap power devices are switching progressively faster compared with
existing silicon devices. Their accurate current measurements for either control or protection …
existing silicon devices. Their accurate current measurements for either control or protection …
New figure-of-merit combining semiconductor and multi-level converter properties
Figures-of-Merit (FOMs) are widely-used to compare power semiconductor materials and
devices and to motivate research and development of new technology nodes. These …
devices and to motivate research and development of new technology nodes. These …
Two-stage 48-V VRM with intermediate bus voltage optimization for data centers
In this article, a high-efficiency and power-density unregulated inductor-inductor-capacitor
(LLC) converter (DCX) is proposed for a first-stage converter in a two-stage 48-V voltage …
(LLC) converter (DCX) is proposed for a first-stage converter in a two-stage 48-V voltage …
Design of ultracompact gate driver integrated with current sensor and commutation path for a 211-kW three-level SiC aircraft propulsion inverter
The aviation industry is increasingly interested in high-efficiency and high-density electric
propulsion systems enabled by high-power silicon carbide (SiC) modules. However …
propulsion systems enabled by high-power silicon carbide (SiC) modules. However …
A compact double-sided cooling 650V/30A GaN power module with low parasitic parameters
Compared with silicon and silicon carbide devices, the unique electrical and structural
characteristics of gallium nitride high electron mobility transistors (GaN HEMTs) make them …
characteristics of gallium nitride high electron mobility transistors (GaN HEMTs) make them …
High-Bandwidth Combinational Rogowski Coil for SiC MOSFET Power Module
Existing current sensors suffer from insufficient measurement bandwidth or large insertion
area to faithfully capture the continuous switching transient current of wide-bandgap …
area to faithfully capture the continuous switching transient current of wide-bandgap …
Beyond 50 MHz bandwidth extension of commercial DC-current measurement sensors with ultra-compact PCB-integrated pickup coils
The control of very high switching frequency power electronic converter systems featuring
latest generation wide bandgap devices requires current measurements with a very high …
latest generation wide bandgap devices requires current measurements with a very high …
Inaccurate switching loss measurement of SiC MOSFET caused by probes: Modelization, characterization, and validation
SiC metal-oxide-semiconductor field-effect transistor (MOSFET) has a fast switching speed
and high slew rate. However, its ultrashort switching time approximates the rise time and …
and high slew rate. However, its ultrashort switching time approximates the rise time and …
Ultrafast protection of discrete SiC MOSFETs with PCB coil-based current sensors
A Rafiq, S Pramanick - IEEE Transactions on Power Electronics, 2022 - ieeexplore.ieee.org
Silicon carbide (SiC) mosfet s offer significant advantages in terms of improved efficiency
and reduced size of power electronic converters. However, they possess lesser short-circuit …
and reduced size of power electronic converters. However, they possess lesser short-circuit …