It has been several years since InGaN/GaN light-emitting diodes (LEDs) on nonpolar and
semipolar orientations were first demonstrated. Prominent performance and inherent …

Micro‐light‐emitting diodes (Micro‐LEDs) based on gallium nitride (GaN) materials offer
versatile platforms for various applications, including displays, data communication tools …

We demonstrate high-efficiency green and yellow-green single-quantum-well light-emitting
diodes (LEDs) grown on semipolar (2021) GaN substrates by metal organic chemical vapor …

We present a systematic study of strain effects on the electronic band structure of the group-
III-nitrides (AlN, GaN and InN) in the wurtzite phase. The calculations are based on density …

We demonstrate high power yellow InGaN single-quantum-well light-emitting diodes (LEDs)
with a peak emission wavelength of 562.7 nm grown on low extended defect density …

We demonstrate a high power green InGaN/GaN multiple‐quantum‐well (MQW) light
emitting diode (LED) with a peak emission wavelength of 516 nm grown on low extended …

A III-nitride light emitting diode (LED) and method of fabricating the same, wherein at least
one surface of a semipolar or nonpolar plane of a III-nitride layer of the LED is textured …

We report the fabrication of violet InGaN/GaN light-emitting diodes (LEDs) on semipolar
(1011) GaN bulk substrates. The LEDs have a dimension of 300× 300 µm 2 and are …

Blue In Ga N∕ Ga N multiple-quantum-well light emitting diodes with a peak emission
wavelength of 444 nm were grown on low extended defect density semipolar (10 1 1) bulk …

In this study, we report the concerted fabrication process, which is easy to transform the size
of active emitting area and produce polarized surface light, using the electric-field-assisted …