Nonpolar and semipolar III-nitride light-emitting diodes: Achievements and challenges
H Masui, S Nakamura, SP DenBaars… - IEEE Transactions on …, 2009 - ieeexplore.ieee.org
It has been several years since InGaN/GaN light-emitting diodes (LEDs) on nonpolar and
semipolar orientations were first demonstrated. Prominent performance and inherent …
semipolar orientations were first demonstrated. Prominent performance and inherent …
Micro‐light‐emitting diodes based on InGaN materials with quantum dots
Z Liu, BR Hyun, Y Sheng, CJ Lin… - Advanced Materials …, 2022 - Wiley Online Library
Micro‐light‐emitting diodes (Micro‐LEDs) based on gallium nitride (GaN) materials offer
versatile platforms for various applications, including displays, data communication tools …
versatile platforms for various applications, including displays, data communication tools …
High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semipolar (2021) GaN substrates
We demonstrate high-efficiency green and yellow-green single-quantum-well light-emitting
diodes (LEDs) grown on semipolar (2021) GaN substrates by metal organic chemical vapor …
diodes (LEDs) grown on semipolar (2021) GaN substrates by metal organic chemical vapor …
Effects of strain on the band structure of group-III nitrides
We present a systematic study of strain effects on the electronic band structure of the group-
III-nitrides (AlN, GaN and InN) in the wurtzite phase. The calculations are based on density …
III-nitrides (AlN, GaN and InN) in the wurtzite phase. The calculations are based on density …
Optical properties of yellow light-emitting diodes grown on semipolar (112¯ 2) bulk GaN substrates
H Sato, RB Chung, H Hirasawa, N Fellows… - Applied Physics …, 2008 - pubs.aip.org
We demonstrate high power yellow InGaN single-quantum-well light-emitting diodes (LEDs)
with a peak emission wavelength of 562.7 nm grown on low extended defect density …
with a peak emission wavelength of 562.7 nm grown on low extended defect density …
High power and high efficiency green light emitting diode on free‐standing semipolar (11 ̄2 2) bulk GaN substrate
H Sato, A Tyagi, H Zhong, N Fellows… - physica status solidi …, 2007 - Wiley Online Library
We demonstrate a high power green InGaN/GaN multiple‐quantum‐well (MQW) light
emitting diode (LED) with a peak emission wavelength of 516 nm grown on low extended …
emitting diode (LED) with a peak emission wavelength of 516 nm grown on low extended …
High light extraction efficiency nitride based light emitting diode by surface roughening
A III-nitride light emitting diode (LED) and method of fabricating the same, wherein at least
one surface of a semipolar or nonpolar plane of a III-nitride layer of the LED is textured …
one surface of a semipolar or nonpolar plane of a III-nitride layer of the LED is textured …
High brightness violet InGaN/GaN light emitting diodes on semipolar (1011) bulk GaN substrates
We report the fabrication of violet InGaN/GaN light-emitting diodes (LEDs) on semipolar
(1011) GaN bulk substrates. The LEDs have a dimension of 300× 300 µm 2 and are …
(1011) GaN bulk substrates. The LEDs have a dimension of 300× 300 µm 2 and are …
High power and high efficiency blue light emitting diode on freestanding semipolar (101¯ 1¯) bulk GaN substrate
Blue In Ga N∕ Ga N multiple-quantum-well light emitting diodes with a peak emission
wavelength of 444 nm were grown on low extended defect density semipolar (10 1 1) bulk …
wavelength of 444 nm were grown on low extended defect density semipolar (10 1 1) bulk …
Horizontally assembled green InGaN nanorod LEDs: scalable polarized surface emitting LEDs using electric-field assisted assembly
HK Park, SW Yoon, YJ Eo, WW Chung, GY Yoo… - Scientific reports, 2016 - nature.com
In this study, we report the concerted fabrication process, which is easy to transform the size
of active emitting area and produce polarized surface light, using the electric-field-assisted …
of active emitting area and produce polarized surface light, using the electric-field-assisted …