AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) suffer from severe quantum
confined Stark effect (QCSE) due to the strong polarization field in the quantum wells (QWs) …

Recent interest in two-dimensional materials has resulted in ultra-thin devices based on the
transfer of transition metal dichalcogenides (TMDs) onto other TMDs or III-nitride materials …

The growth of self-assembled, vertically oriented and uniform nanowires (NWs) has
remained a challenge for efficient light-emitting devices. Here, we demonstrate dislocation …

Indium gallium nitride (InGaN) is an attractive semiconductor, with a tunable direct bandgap
for photoelectrochemical water splitting, but it corrodes in aqueous electrolytes. Cobalt oxide …

Heterogeneous integration of nitrides on Si (100) is expected to open the door to the new
possibilities for this material system in the fields of high-speed integrated photonics and …

Micro-Raman spectroscopy was carried out to evaluate the localized residual stresses in
commercial Gallium-Nitride-based devices, specifically, AlGaN/GaN high-electron-mobility …

Metal-semiconductor-metal (MSM) photodetectors made of gallium antimonide (GaSb) on
silicon waveguides by the rapid melt growth method are investigated. By controlling the …

We examined a sputtered AlN (sp-AlN) buffer layer to improve the emission efficiency of
GaInN-based green LEDs. Both the electroluminescence and photoluminescence emission …

There has been a relentless pursuit of transverse electric (TE)-dominant deep ultraviolet
(UV) optoelectronic devices for efficient surface emitters to replace the environmentally …

We demonstrate improved surface pit and phase separation in thick InGaN grown on a
GaN/Si (111) substrate, using plasma-assisted molecular beam epitaxy with an indium …