Dynamic current sharing mechanism analysis of paralleled SiC MOSFETs considering parasitic mutual inductances based on an improved model
J Lv, C Chen, B Liu, Y Yan, Z Zheng… - IEEE Transactions on …, 2024 - ieeexplore.ieee.org
The dynamic current imbalance between paralleled SiC mosfet s can cause unbalanced
switching losses and limit the current capacity. It is essential to investigate the influences of …
switching losses and limit the current capacity. It is essential to investigate the influences of …
Symmetric and Staggered Terminal Layouts for Enhanced Current Balance and Reduced Parasitic Inductance in SiC Power Modules
Y Wang, X Jiang, S Yuan, R Ouyang… - … on Power Electronics, 2024 - ieeexplore.ieee.org
This paper introduces a fully symmetric layout for a 4-parallel SiC MOSFET half-bridge
power module, wherein each power loop within the module exhibits physical and electrical …
power module, wherein each power loop within the module exhibits physical and electrical …
A Dynamic Current Sharing Model of Multichip Parallel SiC MOSFETs Considering Layout-Dominated Mutual Inductance Coupling
Z Zheng, C Chen, J Lv, Y Yan, J Liu… - IEEE Transactions on …, 2024 - ieeexplore.ieee.org
Dynamic current imbalance of parallel SiC MOSFETs can lead to uneven losses and even
thermal runaway. Unbalanced parasitic parameters dominated by layout are one of the main …
thermal runaway. Unbalanced parasitic parameters dominated by layout are one of the main …
A Dynamic Current Balancing Method for Paralleled SiC MOSFETs with Gate-branch Full-coupled Inductors
J Lv, Y Yan, J Liu, B Liu, Z Zheng… - IEEE Transactions on …, 2024 - ieeexplore.ieee.org
In multichip SiC power modules, unbalanced dynamic currents between the paralleled dies
can induce unbalanced switching losses and junction temperatures, reducing the device's …
can induce unbalanced switching losses and junction temperatures, reducing the device's …
Design and implementation of a full analogue gate driver for current compensation of paralleled SiC‐MOSFETs
A Rezaeian, A Afifi, H Bahrami - IET Power Electronics, 2024 - Wiley Online Library
Silicon carbide MOSFETs have current ratings that are not sufficiently high to be used in
high‐power converters. It is necessary to connect several MOSFETs in parallel in order to …
high‐power converters. It is necessary to connect several MOSFETs in parallel in order to …
Analysis, design, and testing of mechanical switch for the backup protection of switching network unit in fusion device
Q Xu, Z Song, H Li, M Xu - Fusion Engineering and Design, 2024 - Elsevier
Switching network unit (SNU) is one of the important systems in the power supply system of
fusion devices, which excites and establishes plasma current. A mechanical switch has …
fusion devices, which excites and establishes plasma current. A mechanical switch has …
Comparative Analysis and Evaluation of Gate Driver Topologies for Paralleling Silicon Carbide (SiC) Power Modules
Y Li, X Yuan, Y Zhang, K Wang, Y Xu… - 2023 11th International …, 2023 - ieeexplore.ieee.org
Paralleling SiC power modules is usually used to increase the limited current capability of
SiC devices. Under very fast switching speeds (< 100ns) of SiC MOSFETs, how to select the …
SiC devices. Under very fast switching speeds (< 100ns) of SiC MOSFETs, how to select the …