GaN-based light-emitting diodes on various substrates: a critical review
G Li, W Wang, W Yang, Y Lin, H Wang… - Reports on Progress …, 2016 - iopscience.iop.org
GaN and related III-nitrides have attracted considerable attention as promising materials for
application in optoelectronic devices, in particular, light-emitting diodes (LEDs). At present …
application in optoelectronic devices, in particular, light-emitting diodes (LEDs). At present …
Self-powered broadband photodetector based on Bi2Se3/GaN pn mixed-dimensional heterojunction with boosted responsivity
Z Zeng, D Wang, X Fang, C Zhao, B Zhang, D Liu… - Materials Today …, 2023 - Elsevier
Self-powered broadband photodetectors (SPBDs) have received considerable attention
because of their significance in optoelectronic applications. However, limited by problems …
because of their significance in optoelectronic applications. However, limited by problems …
Properties and device performance of BN thin films grown on GaN by pulsed laser deposition
Wide and ultrawide-bandgap semiconductors lie at the heart of next-generation high-power,
high-frequency electronics. Here, we report the growth of ultrawide-bandgap boron nitride …
high-frequency electronics. Here, we report the growth of ultrawide-bandgap boron nitride …
Structural, optical and electronic properties of homoepitaxial GaN nanowalls grown on GaN template by laser molecular beam epitaxy
We have grown homoepitaxial GaN nanowall networks on GaN template using an ultra-high
vacuum laser assisted molecular beam epitaxy system by ablating solid GaN target under a …
vacuum laser assisted molecular beam epitaxy system by ablating solid GaN target under a …
Epitaxial GaN using Ga (NMe 2) 3 and NH 3 plasma by atomic layer deposition
Low temperature deposition of high-quality epitaxial GaN is crucial for its integration in
electronic applications. Chemical vapor deposition at approximately 800° C using SiC with …
electronic applications. Chemical vapor deposition at approximately 800° C using SiC with …
Functional properties of donor (Al) and acceptor (Cu) codoped high dielectric constant ZnO nanoparticles
H Tariq, F Azad - Journal of Nanomaterials, 2022 - Wiley Online Library
In this work, we have synthesized donor‐acceptor (Al‐Cu) codoped ZnO nanoparticles with
a doping concentration of 0%, 0.25%, 0.5%, and 0.75% by coprecipitation method. The …
a doping concentration of 0%, 0.25%, 0.5%, and 0.75% by coprecipitation method. The …
Influence of laser repetition rate on the structural and optical properties of GaN layers grown on sapphire (0001) by laser molecular beam epitaxy
High-quality GaN layers were grown on sapphire (0001) substrates using laser molecular
beam epitaxy (LMBE) by laser ablating a solid GaN target at different laser repetition rates …
beam epitaxy (LMBE) by laser ablating a solid GaN target at different laser repetition rates …
Growth of β-Ga2O3 nanostructures by thermal oxidation of GaN-on-sapphire for optoelectronic devices applications
Heterostructures of wide-bandgap semiconductors, like β-Ga 2 O 3/GaN, are being used in
many high-power, high-frequency electronic and optoelectronic devices. This paper …
many high-power, high-frequency electronic and optoelectronic devices. This paper …
The influence of AlN buffer layer on the growth of self-assembled GaN nanocolumns on graphene
GaN nanocolumns were synthesized on single-layer graphene via radio-frequency plasma-
assisted molecular beam epitaxy, using a thin migration-enhanced epitaxy (MEE) AlN buffer …
assisted molecular beam epitaxy, using a thin migration-enhanced epitaxy (MEE) AlN buffer …
Photodeposition of a conformal metal oxide nanocoating
A versatile photochemical route is reported to access conformal metal oxide nanocoatings
including Cr2O3, Al2O3, ZnO and In2O3 on semiconductor substrates. The Cr2O3 …
including Cr2O3, Al2O3, ZnO and In2O3 on semiconductor substrates. The Cr2O3 …