Silicon as an emissive optical medium
JM Shainline, J Xu - Laser & Photonics Reviews, 2007 - Wiley Online Library
One of the great challenges in photonics has been to modify silicon to enhance light
emission properties. In this review article we survey recent studies which have generated …
emission properties. In this review article we survey recent studies which have generated …
Highly optimized empirical potential model of silicon
TJ Lenosky, B Sadigh, E Alonso… - … and Simulation in …, 2000 - iopscience.iop.org
We fit an empirical potential for silicon using the modified embedded atom (MEAM)
functional form, which contains a nonlinear function of a sum of pairwise and three-body …
functional form, which contains a nonlinear function of a sum of pairwise and three-body …
Extended defects in diamond: The interstitial platelet
JP Goss, BJ Coomer, R Jones, CJ Fall, PR Briddon… - Physical review B, 2003 - APS
The structure and properties of the {001} planar platelet in diamond are investigated using
ab initio theory. We find that a carbonaceous model, based on a layer of self-interstitials …
ab initio theory. We find that a carbonaceous model, based on a layer of self-interstitials …
Sampling the diffusion paths of a neutral vacancy in silicon with quantum mechanical calculations
We report a first-principles study of vacancy-induced self-diffusion in crystalline silicon.
Starting from a fully relaxed configuration with a neutral vacancy, we proceed to search for …
Starting from a fully relaxed configuration with a neutral vacancy, we proceed to search for …
Identification of a major cause of endemically poor mobilities in SiC/SiO2 structures
X Shen, ST Pantelides - Applied Physics Letters, 2011 - pubs.aip.org
Poor electron mobility at SiC/SiO 2 interfaces has long held up the development of SiC-
based power devices. The mobility degradation has been attributed to defects at the …
based power devices. The mobility degradation has been attributed to defects at the …
Photoluminescence signature of silicon interstitial cluster evolution from compact to extended structures in ion-implanted silicon
PK Giri - Semiconductor science and technology, 2005 - iopscience.iop.org
Low temperature photoluminescence (PL) studies have been carried out on ion-implanted
silicon in order to elucidate upon the structure evolution of the self-interstitial (I) clusters as a …
silicon in order to elucidate upon the structure evolution of the self-interstitial (I) clusters as a …
Complexity of small silicon self-interstitial defects
The combination of long-time, tight-binding molecular dynamics and real-time
multiresolution analysis techniques reveals the complexity of small silicon interstitial defects …
multiresolution analysis techniques reveals the complexity of small silicon interstitial defects …
A physically based model for the spatial and temporal evolution of self-interstitial agglomerates in ion-implanted silicon
Because of its supreme reproducibility and the rather easy restriction to local areas by
masking, doping by the implantation of ions will remain the method of choice for the next …
masking, doping by the implantation of ions will remain the method of choice for the next …
Ab initio modeling of boron clustering in silicon
We present results of ab initio calculations for the structure and energetics of boron-
interstitial clusters in Si and a respective continuum model for the nucleation, growth, and …
interstitial clusters in Si and a respective continuum model for the nucleation, growth, and …
Tight-binding theory of native point defects in silicon
L Colombo - Annual Review of Materials Research, 2002 - annualreviews.org
▪ Abstract Vacancies and self-interstitial defects in silicon are here investigated by means of
semi-empirical quantum molecular dynamics simulations performed within the tight-binding …
semi-empirical quantum molecular dynamics simulations performed within the tight-binding …