Neuromorphic computing: From devices to integrated circuits
V Saxena - Journal of Vacuum Science & Technology B, 2021 - pubs.aip.org
A variety of nonvolatile memory (NVM) devices including the resistive Random Access
Memory (RRAM) are currently being investigated for implementing energy-efficient …
Memory (RRAM) are currently being investigated for implementing energy-efficient …
Investigating selectorless property within niobium devices for storage applications
PH Chen, CY Lin, TC Chang… - … Applied Materials & …, 2022 - ACS Publications
Resistive random-access memory (RRAM) crossbar arrays have shown significant promise
as drivers of neuromorphic computing, in-memory computing, and high-density storage …
as drivers of neuromorphic computing, in-memory computing, and high-density storage …
Self-Rectifying Al2O3/TaOx Memristor With Gradual Operation at Low Current by Interfacial Layer
X Zhao, K Zhang, K Hu, Y Zhang… - … on Electron Devices, 2021 - ieeexplore.ieee.org
Sneak path current phenomenon in a memristor array based on cross-point structure could
lead to crosstalk, which limits its application in high-density large-scale arrays. Self-rectifying …
lead to crosstalk, which limits its application in high-density large-scale arrays. Self-rectifying …
Performance prospects of deeply scaled spin-transfer torque magnetic random-access memory for in-memory computing
In recent years, Spin-Transfer-Torque Magnetic Random Access Memory (STT-MRAM) has
been considered as one of the most promising non-volatile memory candidates for in …
been considered as one of the most promising non-volatile memory candidates for in …
Dual-Function Device Fabricated Using One Single SiO2 Resistive Switching Layer
WC Jhang, CC Hsu - IEEE Electron Device Letters, 2022 - ieeexplore.ieee.org
In this letter, a high-performance dual-function device fabricated using one single SiO 2
resistive switching layer is demonstrated. The SiO 2 layer is sandwiched between Ag and n+ …
resistive switching layer is demonstrated. The SiO 2 layer is sandwiched between Ag and n+ …
Accurate prediction of migration barrier of oxygen vacancy in and : Explaining experimental results with density functional theory
Resistive-switching-based memory is a popular research area for majorly neuromorphic,
nonvolatile memory design and in-memory computing. Pr 1− x Ca x MnO 3 [PCMO (x)] is …
nonvolatile memory design and in-memory computing. Pr 1− x Ca x MnO 3 [PCMO (x)] is …
Understanding the Region of Resistance Change in Pr0.7Ca0.3MnO3 RRAM
Pr1–x Ca x MnO3 (PCMO)-based resistance random access memory (RRAM) is attractive in
large-scale memory and neuromorphic applications as it is nonfilamentary and area …
large-scale memory and neuromorphic applications as it is nonfilamentary and area …
Chemical defect-dependent resistive switching characterization in CeO2 thin films
The aim of this study was to characterize the resistive memory switching mechanism of
cerium dioxide (CeO 2) thin insulating films for different dopants. Three chemical elements …
cerium dioxide (CeO 2) thin insulating films for different dopants. Three chemical elements …
Bipolar resistive switching with unidirectional selector function in nitride/oxide heterostructures
In this work, we propose a self-rectifying Ni/SiN x/HfO 2/p++ Si resistive memory device to
alleviate the sneak-path current occurring in crossbar array. The bilayer (Ni/SiN x/HfO 2/p++ …
alleviate the sneak-path current occurring in crossbar array. The bilayer (Ni/SiN x/HfO 2/p++ …